FQD13N10LTM_NBEL001
FQD13N10LTM_NBEL001 Datasheet
FQD13N10L / FQU13N10L N-Channel MOSFET
| Part | Datasheet |
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FQD13N10LTM_NBEL001 |
FQD13N10LTM_NBEL001 (pdf) |
| Related Parts | Information |
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FQD13N10LTF |
FQD13N10LTF |
| PDF Datasheet Preview |
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| FQD13N10L / FQU13N10L N-Channel MOSFET FQD13N10L / FQU13N10L N-Channel QFET MOSFET 100 V, 10 A, 180 March 2013 This N-Channel produced using enhancement mode power Fairchild MOSFET is proprietary planar stripe and DMOS technology. This advanced • 10 A, 60 V, RDS on = 180 Max = 10 V, MOSFET technology has been especially tailored to reduce ID = A on-state resistance, and to provide superior switching performance and high avalanche energy strength. These • Low Gate Charge Typ. nC devices are suitable for switched mode power supplies, • Low Crss Typ. 20 pF audio amplifier, DC motor control, and variable switching power applications. • 100% Avalanche Tested • 175°C Maximum Junction Temperature Rating D-PAK FQD Series I-PAK FQU Series Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous TC = 25°C - Continuous TC = 100°C Drain Current - Pulsed Note 1 Gate-Source Voltage Single Pulsed Avalanche Energy Note 2 Avalanche Current Note 1 Repetitive Avalanche Energy Note 1 Peak Diode Recovery dv/dt Note 3 Power Dissipation TA = 25°C * Power Dissipation TC = 25°C |
| More datasheets: M5526 SL001 | B66481G0000X608 | 13219 | DFR0064 | FDI33N25TU | FJAF6810TU | CR10-1962F-T | 104882-HMC128G8 | CWN-572-50-0021-204 | CWN-552-20-0022 |
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