FDI33N25TU
FDI33N25TU Datasheet
FDB33N25 / FDI33N25 250V N-Channel MOSFET
| Part | Datasheet |
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FDI33N25TU |
FDI33N25TU (pdf) |
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| FDB33N25 / FDI33N25 250V N-Channel MOSFET FDB33N25 / FDI33N25 250V N-Channel MOSFET • 33A, 250V, RDS on = = 10 V • Low gate charge typical nC • Low Crss typical 39 pF • Fast switching • 100% avalanche tested • Improved dv/dt capability May 2006 UniFETTM These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction. D2-PAK FDB Series I2-PAK FDI Series Absolute Maximum Ratings VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous TC = 25°C - Continuous TC = 100°C - Pulsed Note 1 Gate-Source voltage Single Pulsed Avalanche Energy Note 2 Avalanche Current Note 1 Repetitive Avalanche Energy Note 1 Peak Diode Recovery dv/dt Note 3 Power Dissipation TC = 25°C - Derate above 25°C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds FDB33N25 / FDI33N25 250 33 132 ±30 918 33 235 -55 to +150 Unit V A V mJ A mJ V/ns W/°C °C Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Package Marking and Ordering Information Device Marking FDB33N25 FDI33N25 Device FDB33N25TM FDI33N25TU Package D2-PAK I2-PAK Reel Size 330mm - Tape Width 24mm - Quantity 800 50 Electrical Characteristics TC = 25°C unless otherwise noted Parameter Conditions Min. Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250uA Breakdown Voltage Temperature Coefficient ID = 250uA, Referenced to 25°C IDSS Zero Gate Voltage Drain Current VDS = 250V, VGS = 0V VDS = 200V, TC = 125°C IGSSF Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V IGSSR On Characteristics VGS th Gate Threshold Voltage VDS = VGS, ID = 250uA RDS on Static Drain-Source On-Resistance VGS = 10V, ID = 16.5A Forward Transconductance Dynamic Characteristics VDS = 40V, ID =16.5A Note 4 -- |
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