FQD13N10LTF

FQD13N10LTF Datasheet

FQD13N10L / FQU13N10L N-Channel MOSFET

Part	Datasheet
FQD13N10LTF	FQD13N10LTF (pdf)

Related Parts	Information
FQD13N10LTM_NBEL001	FQD13N10LTM_NBEL001

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FQD13N10L / FQU13N10L N-Channel MOSFET FQD13N10L / FQU13N10L N-Channel QFET MOSFET 100 V, 10 A, 180 March 2013 This N-Channel produced using enhancement mode power Fairchild MOSFET is proprietary planar stripe and DMOS technology. This advanced • 10 A, 60 V, RDS on = 180 Max = 10 V, MOSFET technology has been especially tailored to reduce ID = A on-state resistance, and to provide superior switching performance and high avalanche energy strength. These • Low Gate Charge Typ. nC devices are suitable for switched mode power supplies, • Low Crss Typ. 20 pF audio amplifier, DC motor control, and variable switching power applications. • 100% Avalanche Tested • 175°C Maximum Junction Temperature Rating D-PAK FQD Series I-PAK FQU Series Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous TC = 25°C - Continuous TC = 100°C Drain Current - Pulsed Note 1 Gate-Source Voltage Single Pulsed Avalanche Energy Note 2 Avalanche Current Note 1 Repetitive Avalanche Energy Note 1 Peak Diode Recovery dv/dt Note 3 Power Dissipation TA = 25°C * Power Dissipation TC = 25°C

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FQD13N10L / FQU13N10L N-Channel MOSFET

FQD13N10L / FQU13N10L

N-Channel QFET MOSFET
100 V, 10 A, 180

March 2013

This N-Channel produced using
enhancement mode power Fairchild

MOSFET is proprietary
planar stripe and DMOS technology. This advanced
• 10 A, 60 V, RDS on = 180 Max = 10 V,

MOSFET technology has been especially tailored to reduce

ID = A
on-state resistance, and to provide superior switching performance and high avalanche energy strength. These
• Low Gate Charge Typ. nC
devices are suitable for switched mode power supplies,
• Low Crss Typ. 20 pF
audio amplifier, DC motor control, and variable switching power applications.
• 100% Avalanche Tested
• 175°C Maximum Junction Temperature Rating

D-PAK

FQD Series

I-PAK

FQU Series

Absolute Maximum Ratings TC = 25°C unless otherwise noted

Symbol VDSS ID

IDM VGSS EAS IAR EAR dv/dt PD

TJ, TSTG TL

Parameter

Drain-Source Voltage

Drain Current
- Continuous TC = 25°C - Continuous TC = 100°C

Drain Current - Pulsed

Note 1

Gate-Source Voltage

Single Pulsed Avalanche Energy

Note 2

Avalanche Current

Note 1

Repetitive Avalanche Energy

Note 1

Peak Diode Recovery dv/dt

Note 3

Power Dissipation TA = 25°C * Power Dissipation TC = 25°C

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Datasheet ID: FQD13N10LTF 515212