SPP80N04S2-H4

SPP80N04S2-H4 Datasheet


SPI80N04S2-H4 SPP80N04S2-H4,SPB80N04S2-H4

Part Datasheet
SPP80N04S2-H4 SPP80N04S2-H4 SPP80N04S2-H4 (pdf)
Related Parts Information
SPB80N04S2-H4 SPB80N04S2-H4 SPB80N04S2-H4
PDF Datasheet Preview
Power-Transistor

Feature
• N-Channel
• Enhancement mode
• 175°C operating temperature
• Avalanche rated
• dv/dt rated

P- TO262 -3-1

SPI80N04S2-H4 SPP80N04S2-H4,SPB80N04S2-H4

Product Summary

RDS on

P- TO263 -3-2

P- TO220 -3-1

Type SPP80N04S2-H4 SPB80N04S2-H4 SPI80N04S2-H4

Package
Ordering Code

P- TO220 -3-1 Q67060-S6014

P- TO263 -3-2 Q67060-S6013

P- TO262 -3-1 Q67060-S6021

Marking 2N04H4

Maximum Ratings, at Tj = 25 °C, unless otherwise specified

Parameter

Continuous drain current 1

TC=25°C

Pulsed drain current

TC=25°C

Avalanche energy, single pulse

ID=80 A , VDD=25V,

IS=80A, VDS=32V, di/dt=200A/µs, Tjmax=175°C

Gate source voltage Power dissipation

TC=25°C

Operating and storage temperature IEC climatic category DIN IEC 68-1

ID puls

EAS EAR dv/dt

VGS Ptot

Tj , Tstg

Value
80 320
±20 300
+175 55/175/56

Unit A
kV/µs V W °C
2003-05-08

Thermal Characteristics Parameter

Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB:
min. footprint 6 cm2 cooling area 3

SPI80N04S2-H4 SPP80N04S2-H4,SPB80N04S2-H4

Values

Unit
min. typ. max.

RthJC RthJA
- K/W

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter

Values

Unit
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Datasheet ID: SPP80N04S2-H4 638272