SPB80N04S2-H4
SPB80N04S2-H4 Datasheet
SPI80N04S2-H4 SPP80N04S2-H4,SPB80N04S2-H4
| Part | Datasheet |
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SPB80N04S2-H4 |
SPB80N04S2-H4 (pdf) |
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SPP80N04S2-H4 |
SPP80N04S2-H4 |
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| Power-Transistor Feature • N-Channel • Enhancement mode • 175°C operating temperature • Avalanche rated • dv/dt rated P- TO262 -3-1 SPI80N04S2-H4 SPP80N04S2-H4,SPB80N04S2-H4 Product Summary RDS on P- TO263 -3-2 P- TO220 -3-1 Type SPP80N04S2-H4 SPB80N04S2-H4 SPI80N04S2-H4 Package Ordering Code P- TO220 -3-1 Q67060-S6014 P- TO263 -3-2 Q67060-S6013 P- TO262 -3-1 Q67060-S6021 Marking 2N04H4 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current 1 TC=25°C Pulsed drain current TC=25°C Avalanche energy, single pulse ID=80 A , VDD=25V, IS=80A, VDS=32V, di/dt=200A/µs, Tjmax=175°C Gate source voltage Power dissipation TC=25°C Operating and storage temperature IEC climatic category DIN IEC 68-1 ID puls EAS EAR dv/dt VGS Ptot Tj , Tstg Value 80 320 ±20 300 +175 55/175/56 Unit A kV/µs V W °C 2003-05-08 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: min. footprint 6 cm2 cooling area 3 SPI80N04S2-H4 SPP80N04S2-H4,SPB80N04S2-H4 Values Unit min. typ. max. RthJC RthJA - K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Values Unit |
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