IPP06CNE8N G

IPP06CNE8N G Datasheet

IPB06CNE8N G IPI06CNE8N G IPP06CNE8N G

Part	Datasheet
IPP06CNE8N G	IPP06CNE8N G (pdf)

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IPB06CNE8N G IPI06CNE8N G IPP06CNE8N G OptiMOS 2 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS on product FOM • Very low on-resistance R DS on Product Summary V DS R DS on ,max TO263 ID 85 V mΩ 100 A • 175 °C operating temperature • Pb-free lead plating RoHS compliant • Qualified according to JEDEC1 for target application • Ideal for high-frequency switching and synchronous rectification • Halogen-free according to IEC61249-2-21 Type IPB06CNE8N G IPI06CNE8N G IPP06CNE8N G Package Marking PG-TO263-3 06CNE8N PG-TO262-3 06CNE8N PG-TO220-3 06CNE8N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current T C=25 °C2 T C=100 °C Pulsed drain current3 I D,pulse T C=25 °C Avalanche energy, single pulse I D=100 A, R GS=25 Ω dv /dt I D=100 A, V DS=68 V, di /dt =100 A/µs, T j,max=175 °C Gate source voltage4 Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg IEC climatic category DIN IEC 68-1 Value 100 88 400 480 ±20 214 -55 175 55/175/56 Unit A mJ kV/µs V W °C 2010-01-18 IPB06CNE8N G IPI06CNE8N G IPP06CNE8N G

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IPB06CNE8N G IPI06CNE8N G IPP06CNE8N G

OptiMOS 2 Power-Transistor

Features
• N-channel, normal level
• Excellent gate charge x R DS on product FOM
• Very low on-resistance R DS on

Product Summary V DS R DS on ,max TO263 ID
85 V mΩ 100 A
• 175 °C operating temperature
• Pb-free lead plating RoHS compliant
• Qualified according to JEDEC1 for target application
• Ideal for high-frequency switching and synchronous rectification
• Halogen-free according to IEC61249-2-21

Type

IPB06CNE8N G

IPI06CNE8N G

IPP06CNE8N G

Package Marking

PG-TO263-3 06CNE8N

PG-TO262-3 06CNE8N

PG-TO220-3 06CNE8N

Maximum ratings, at T j=25 °C, unless otherwise specified

Parameter

Symbol Conditions

Continuous drain current

T C=25 °C2

T C=100 °C

Pulsed drain current3

I D,pulse T C=25 °C

Avalanche energy, single pulse

I D=100 A, R GS=25 Ω
dv /dt

I D=100 A, V DS=68 V, di /dt =100 A/µs, T j,max=175 °C

Gate source voltage4

Power dissipation

P tot

T C=25 °C

Operating and storage temperature T j, T stg

IEC climatic category DIN IEC 68-1

Value 100 88 400 480
±20 214 -55 175 55/175/56

Unit A
mJ kV/µs V W °C
2010-01-18

IPB06CNE8N G IPI06CNE8N G IPP06CNE8N G

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Datasheet ID: IPP06CNE8NG 638109