APT12F60K

APT12F60K Datasheet

APT12F60K

Part	Datasheet
APT12F60K	APT12F60K (pdf)

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APT12F60K 600V, 12A, MAX,<180nS N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly reduced ratio of Crss/Ciss result in excellent noise immunity and low switching loss. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control di/dt during switching, resulting in low EMI and reliable paralleling, even when switching APT12F60K at very high frequency. Single die FREDFET G • Fast switching with low EMI • Low trr for high reliability • Ultra low Crss for improved noise immunity • Low gate charge • Avalanche energy rated • RoHS compliant • ZVS phase shifted and other full bridge • Half bridge • PFC and other boost converter • Buck converter • Single and two switch forward • Flyback Absolute Maximum Ratings Symbol Parameter Continuous Drain Current TC = 25°C Continuous Drain Current TC = 100°C Pulsed Drain Current 1 VGS Gate-Source Voltage EAS Single Pulse Avalanche Energy 2 Avalanche Current, Repetitive or Non-Repetitive Thermal and Mechanical Characteristics Symbol Characteristic Total Power Dissipation TC = 25°C Junction to Case Thermal Resistance Case to Sink Thermal Resistance, Flat, Greased Surface TJ,TSTG Operating and Storage Junction Temperature Range Soldering Temperature for 10 Seconds 1.6mm from case Package Weight Torque Mounting Torque TO-220 Package , 4-40 or M3 screw Ratings Unit ±30 Min Typ Max Unit °C/W 10 in•lbf N•m Static Characteristics TJ = 25°C unless otherwise Symbol Parameter Test Conditions VBR DSS

PDF Datasheet Preview

APT12F60K
600V, 12A, MAX,<180nS

N-Channel FREDFET

Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET.

This 'FREDFET' version has a drain-source body diode that has been optimized for
high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly
reduced ratio of Crss/Ciss result in excellent noise immunity and low switching loss. The
intrinsic gate resistance and capacitance of the poly-silicon gate structure help control
di/dt during switching, resulting in low EMI and reliable paralleling, even when switching

APT12F60K
at very high frequency.

Single die FREDFET G
• Fast switching with low EMI
• Low trr for high reliability
• Ultra low Crss for improved noise immunity
• Low gate charge
• Avalanche energy rated
• RoHS compliant
• ZVS phase shifted and other full bridge
• Half bridge
• PFC and other boost converter
• Buck converter
• Single and two switch forward
• Flyback

Absolute Maximum Ratings

Symbol Parameter

Continuous Drain Current TC = 25°C Continuous Drain Current TC = 100°C

Pulsed Drain Current 1

VGS Gate-Source Voltage

EAS Single Pulse Avalanche Energy 2

Avalanche Current, Repetitive or Non-Repetitive

Thermal and Mechanical Characteristics

Symbol Characteristic

Total Power Dissipation TC = 25°C Junction to Case Thermal Resistance

Case to Sink Thermal Resistance, Flat, Greased Surface

TJ,TSTG Operating and Storage Junction Temperature Range

Soldering Temperature for 10 Seconds 1.6mm from case

Package Weight

Torque Mounting Torque TO-220 Package , 4-40 or M3 screw

Ratings

Unit
±30

Min Typ Max Unit
°C/W
10 in•lbf

N•m

Static Characteristics

TJ = 25°C unless otherwise

Symbol Parameter

Test Conditions

VBR DSS

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Datasheet ID: APT12F60K 648618