QSB363CYR
QSB363CYR Datasheet
QSB363C Subminiature Plastic Silicon Infrared Phototransistor
| Part | Datasheet |
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QSB363CYR |
QSB363CYR (pdf) |
| Related Parts | Information |
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QSB363CGR |
QSB363CGR |
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QSB363CZR |
QSB363CZR |
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| QSB363C Subminiature Plastic Silicon Infrared Phototransistor March 2011 QSB363C Subminiature Plastic Silicon Infrared Phototransistor • NPN Silicon Phototransistor • T-3/4 2mm Surface Mount Package • Medium Wide Beam Angle, 24° • Clear Plastic Package • Matched Emitters QEB363 or QEB373 • Tape & Reel Option See Tape & Reel Specifications • Lead Form Options Gullwing, Yoke, Z-Bend The QSB363 is a silicon phototransistor encapsulated in a clear infrared T-3/4 package. Package Dimensions EMITTER NOTES Dimensions are in inches mm . Tolerance of ± on all non nominal dimensions unless otherwise specified. Schematic COLLECTOR EMITTER QSB363C Subminiature Plastic Silicon Infrared Phototransistor Absolute Maximum Ratings TA = 25°C unless otherwise Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Parameter TOPR TSTG TSOL VCEO VECO Operating Temperature Storage Temperature Soldering Temperature Iron 2,3,4 Soldering Temperature Flow 2,3 Collector Emitter Voltage Emitter Collector Voltage Power Dissipation 1 Notes Derate power dissipation linearly 1.33mW/°C above 25°C. RMA flux is recommended. Methanol or isopropyl alcohols are recommended as cleaning agents. Pulse conditions tp = 100µs, T = 10ms. D = 940nm, GaAs. Rating -25 to +85 -40 to +85 260 30 Unit °C °C °C °C V mW Electrical/Optical Characteristics TA = 25°C Parameters Test Conditions λP Θ ICEO BVCEO BVECO IC on VCE SAT tr tf Peak Sensitivity Wavelength Reception Angle Collector Dark Current Collector-Emitter Breakdown Voltage Emitter-Collector Breakdown Voltage On-State Collector Current Collector-Emitter Saturation Voltage Rise Time Fall Time VCE = 20V, Ee = 0mW/cm2 IC = 100µA, Ee = 0mW/cm2 IE = 100µA, Ee = 0mW/cm2 VCE = 5V, Ee = 0.5mW/cm2 IC = 2mA, Ee = 1mW/cm2 VCE = 5 V, IC = 1mA, RL = Min. Typ. 940 ±12 Max. Units nm 100 nA 2011 Fairchild Semiconductor Corporation QSB363C Subminiature Plastic Silicon Infrared Phototransistor Typical Performance Curves Fig. 1 Collector Power Dissipation vs. Ambient Temperature Collector Power Dissipation Pd mW 75 85 100 |
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