J305
J305 Datasheet
J305 N-Channel RF Amplifier
| Part | Datasheet |
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J305 |
J305 (pdf) |
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| J305 N-Channel RF Amplifier September 2007 J305 N-Channel RF Amplifier • This device is designed primarily for electronic switching applications such as low on resistance analog switching. • Sourced from process TO-92 Gate Source Drain Absolute Maximum Ratings* Ta=25°C unless otherwise noted VDG VGS IGF TJ, TSTG Parameter Drain-Gate Voltage Gate-Source Voltage Forward Gate Current Operating and Storage Junction Temperature Range * This ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES 1 These rating are based on a maximum junction temperature of 150 degrees C. 2 These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Value 30 -30 10 -55 ~ +150 Units V mA °C Thermal Characteristics Ta=25°C unless otherwise noted Parameter Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max. 350 125 357 Units mW/°C °C/W °C/W Electrical Characteristics* Ta=25°C unless otherwise noted Parameter Test Condition Min. Max. Units Off Characteristics V BR GSS IGSS VGS off VGS On Characteristics *IDSS Zero-Gate Voltage Drain Current * Small Signal Characteristics Forward Transferconductance * Pulse Test Pulse Width 300us, Duty Cycle = 2% IG = 1.0uA, VDS = 0 VGS = 20V, VDS = 0 VDS = 15V, ID = 100nA VDS = 15V, ID = 0.2mA VDS = 15V, VGS = 0 VDS = 15V, VGS = 0V -100 |
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