BGS12SL6E6327XTSA1

BGS12SL6E6327XTSA1 Datasheet

BGS12SL6

Part	Datasheet
BGS12SL6E6327XTSA1	BGS12SL6E6327XTSA1 (pdf)

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BGS12SL6 - GHz SPDT Switch in ultra small package with 0.77mm2 footprint Data Sheet Power Management & Multimarket Edition May 23, 2014 Published by Technologies AG 81726 Munich, Germany c 2012 Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Technologies Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Technologies Technologies components may be used in life-support devices or systems only with the express written approval of Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Document No. BGS12SL6.pdf Updated Temperature Range in Table 6 BGS12SL6 Trademarks of Technologies AG Other Trademarks Advance Design SystemTM ADS of Agilent Technologies, AMBATM, ARMTM, MULTI-ICETM, PRIMECELLTM, REALVIEWTM, THUMBTM of ARM Limited, UK. AUTOSARTM is licensed by AUTOSAR development partnership. BluetoothTM of Bluetooth SIG Inc. CAT-iqTM of DECT Forum. COLOSSUSTM, FirstGPSTM of Trimble Navigation Ltd. EMVTM of EMVCo, LLC Visa Holdings Inc. . EPCOSTM of Epcos AG. FLEXGOTM of Microsoft Corporation. FlexRayTM is licensed by FlexRay Consortium. HYPERTERMINALTM of Hilgraeve Incorporated. IECTM of Commission Electrotechnique Internationale. IrDATM of Infrared Data Association Corporation. ISOTM of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLABTM of MathWorks, Inc. MAXIMTM of Maxim Integrated Products, Inc. MICROTECTM, NUCLEUSTM of Mentor Graphics Corporation. MifareTM of NXP. MIPITM of MIPI Alliance, Inc. MIPSTM of MIPS Technologies, Inc., USA. muRataTM of MURATA MANUFACTURING CO., MICROWAVE OFFICETM MWO of Applied Wave Research Inc., OmniVisionTM of OmniVision Technologies, Inc. OpenwaveTM Openwave Systems Inc. RED HATTM Red Hat, Inc. RFMDTM RF Micro Devices, Inc. SIRIUSTM of Sirius Sattelite Radio Inc. SOLARISTM of Sun Microsystems, Inc. SPANSIONTM of Spansion LLC Ltd. SymbianTM of Symbian Software Limited. TAIYO YUDENTM of Taiyo Yuden Co. TEAKLITETM of CEVA, Inc. TEKTRONIXTM of Tektronix Inc. TOKOTM of TOKO KABUSHIKI KAISHA TA. UNIXTM of X/Open Company Limited. VERILOGTM, PALLADIUMTM of Cadence Design Systems, Inc. VLYNQTM of Texas Instruments Incorporated. VXWORKSTM, WIND RIVERTM of WIND RIVER SYSTEMS, INC. ZETEXTM of Diodes Zetex Limited. Last Trademarks Update 2012-12-13 Data Sheet Contents 1 Features 2 Product Description 3 Maximum Ratings 4 Operation Ranges 5 RF Characteristics 6 Pin Description 7 Package Information BGS12SL6 7 9 10 12 Data Sheet BGS12SL6 List of Figures 1 BGS12SL6 Block Diagram 8 2 Pin 12 3 Package Outline 13 4 Footprint 13 5 Pin 1 Marking top view 13 6 Tape Drawing for TSLP-6-4 14 Data Sheet BGS12SL6 List of Tables 1 Ordering Information 7 2 Truth Table 8 3 Maximum Ratings 9 4 Operation Ranges 9 5 RF Input Power 9 6 RF Characteristics 10 7 Pin Description 12 8 Mechanical Data 12 Data Sheet BGS12SL6 BGS12SL6 - GHz SPDT Switch in ultra small package with 0.77mm2 footprint 1 Features • 2 high-linearity TRx paths with power handling capability of up to dBm • High switching speed, ideal for WLAN and Bluetooth applications • All ports fully bi-directional • Low insertion loss • Low harmonic generation • High port-to-port isolation • to 6 GHz coverage • High ESD robustness • On-chip control logic • Very small leadless and halogen free package TSLP-6-4 0.7x1.1mm2 with super low height of mm • No decoupling capacitors required if no DC applied on RF lines • RoHS compliant package 2 Product Description The BGS12SL6 RF MOS switch is a general purpose - GHz SPDT Switch suitable for band/mode switching in cellular systems and WLAN applications. Any of the 2 ports can be used as termination of the diversity antenna handling up to dBm. This single supply chip integrates on-chip CMOS logic driven by a simple, single-pin CMOS or TTL compatible control input signal. The dB compression point exceeds the switch’s maximum input power level, resulting in linear performance at all signal levels. The RF switch has a very low insertion loss of dB in the 1 GHz and dB in the GHz range. The BGS12SL6 RF switch is manufactured in patented MOS technology, offering the performance of GaAs with the economy and integration of conventional CMOS including the inherent higher ESD robustness. The device has a very small size of only 0.7x1.1mm2 and a low height of 0.31mm. No decoupling capacitors are required in typical applications as long as no DC is applied to any RF port. Table 1 Ordering Information Type BGS12SL6 Package TSLP-6-4 Data Sheet Marking S RFin BGS12SL6 Decoder +ESD Figure 1 BGS12SL6 Block Diagram Vdd Ctrl Table 2 Truth Table Switched Paths Ctrl RFin - RF1 RFin - RF2 Data Sheet 3 Maximum Ratings BGS12SL6 Table 3 Maximum Ratings at TA = 25 unless otherwise Parameter Values Min. Typ. Max. Supply Voltage Control Voltage Storage Temperature Range RF Input Power Junction Temperature ESD Capability VCtrl TSTG Human Body Model 1 ESD Capability RFin Port 2 VESD_HBM −1 VESD_RFin −8 1 Human Body Model ANSI/ESDA/JEDEC JS-001-2012 R = C = 100 pF . 2 IEC 61000-4-2 R = 330 C = 150 pF , contact discharge. Unit Note / Test Condition kV RFin versus GND, with 27 nH shunt inductor Attention Stresses above the max. values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Maximum ratings are absolute ratings exceeding only one of these values may cause irreversible damage to the integrated circuit. 4 Operation Ranges Table 4 Operation Ranges Parameter Ambient Temperature RF Frequency Supply Voltage Control Voltage Low Control Voltage High TA f Vdd VCtrl _L VCtrl _H Min. -40 Values Typ. 25 Max. 85 6 Vdd Unit Note / Test Condition Table 5 RF Input Power Parameter

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BGS12SL6
- GHz SPDT Switch in ultra small package with 0.77mm2 footprint

Data Sheet

Power Management & Multimarket

Edition May 23, 2014

Published by Technologies AG 81726 Munich, Germany
c 2012 Technologies AG All Rights Reserved.

Legal Disclaimer

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party.

Information

For further information on technology, delivery terms and conditions and prices, please contact the nearest Technologies

Warnings

Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Technologies

Technologies components may be used in life-support devices or systems only with the express written approval of Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

Document No. BGS12SL6.pdf

Updated Temperature Range in Table 6

BGS12SL6

Trademarks of Technologies AG

Other Trademarks

Advance Design SystemTM ADS of Agilent Technologies, AMBATM, ARMTM, MULTI-ICETM, PRIMECELLTM, REALVIEWTM, THUMBTM of ARM Limited, UK. AUTOSARTM is licensed by AUTOSAR development partnership. BluetoothTM of Bluetooth SIG Inc. CAT-iqTM of DECT Forum. COLOSSUSTM, FirstGPSTM of Trimble Navigation Ltd. EMVTM of EMVCo, LLC Visa Holdings Inc. . EPCOSTM of Epcos AG. FLEXGOTM of Microsoft Corporation. FlexRayTM is licensed by FlexRay Consortium. HYPERTERMINALTM of Hilgraeve Incorporated. IECTM of Commission Electrotechnique Internationale. IrDATM of Infrared Data Association Corporation. ISOTM of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLABTM of MathWorks, Inc. MAXIMTM of Maxim Integrated Products, Inc. MICROTECTM, NUCLEUSTM of Mentor Graphics Corporation. MifareTM of NXP. MIPITM of MIPI Alliance, Inc. MIPSTM of MIPS Technologies, Inc., USA. muRataTM of MURATA MANUFACTURING CO., MICROWAVE OFFICETM MWO of Applied Wave Research Inc., OmniVisionTM of OmniVision Technologies, Inc. OpenwaveTM Openwave Systems Inc. RED HATTM Red Hat, Inc. RFMDTM RF Micro Devices, Inc. SIRIUSTM of Sirius Sattelite Radio Inc. SOLARISTM of Sun Microsystems, Inc. SPANSIONTM of Spansion LLC Ltd. SymbianTM of Symbian Software Limited. TAIYO YUDENTM of Taiyo Yuden Co. TEAKLITETM of CEVA, Inc. TEKTRONIXTM of Tektronix Inc. TOKOTM of TOKO KABUSHIKI KAISHA TA. UNIXTM of X/Open Company Limited. VERILOGTM, PALLADIUMTM of Cadence Design Systems, Inc. VLYNQTM of Texas Instruments Incorporated. VXWORKSTM, WIND RIVERTM of WIND RIVER SYSTEMS, INC. ZETEXTM of Diodes Zetex Limited.

Last Trademarks Update 2012-12-13

Data Sheet

Contents
1 Features 2 Product Description 3 Maximum Ratings 4 Operation Ranges 5 RF Characteristics 6 Pin Description 7 Package Information

BGS12SL6
7 9 10 12

Data Sheet

BGS12SL6

List of Figures
1 BGS12SL6 Block Diagram 8 2 Pin 12 3 Package Outline 13 4 Footprint 13 5 Pin 1 Marking top view 13 6 Tape Drawing for TSLP-6-4 14

Data Sheet

BGS12SL6

List of Tables
1 Ordering Information 7 2 Truth Table 8 3 Maximum Ratings 9 4 Operation Ranges 9 5 RF Input Power 9 6 RF Characteristics 10 7 Pin Description 12 8 Mechanical Data 12

Data Sheet

BGS12SL6

BGS12SL6 - GHz SPDT Switch in ultra small package with 0.77mm2 footprint
1 Features
• 2 high-linearity TRx paths with power handling capability of up to dBm
• High switching speed, ideal for WLAN and Bluetooth applications
• All ports fully bi-directional
• Low insertion loss
• Low harmonic generation
• High port-to-port isolation
• to 6 GHz coverage
• High ESD robustness
• On-chip control logic
• Very small leadless and halogen free package TSLP-6-4
0.7x1.1mm2 with super low height of mm
• No decoupling capacitors required if no DC applied on RF lines
• RoHS compliant package
2 Product Description

The BGS12SL6 RF MOS switch is a general purpose - GHz SPDT Switch suitable for band/mode switching in cellular systems and WLAN applications. Any of the 2 ports can be used as termination of the diversity antenna handling up to dBm. This single supply chip integrates on-chip CMOS logic driven by a simple, single-pin CMOS or TTL compatible control input signal. The dB compression point exceeds the switch’s maximum input power level, resulting in linear performance at all signal levels. The RF switch has a very low insertion loss of dB in the 1 GHz and dB in the GHz range. The BGS12SL6 RF switch is manufactured in patented MOS technology, offering the performance of GaAs with the economy and integration of conventional CMOS including the inherent higher ESD robustness. The device has a very small size of only 0.7x1.1mm2 and a low height of 0.31mm. No decoupling capacitors are required in typical applications as long as no DC is applied to any RF port.
Table 1 Ordering Information Type BGS12SL6

Package TSLP-6-4

Data Sheet

Marking S

RFin

BGS12SL6

Decoder +ESD

Figure 1 BGS12SL6 Block Diagram

Vdd Ctrl

Table 2 Truth Table

Switched Paths

Ctrl

RFin - RF1

RFin - RF2

Data Sheet
3 Maximum Ratings

BGS12SL6

Table 3 Maximum Ratings at TA = 25 unless otherwise

Parameter

Values

Min. Typ. Max.

Supply Voltage Control Voltage Storage Temperature Range RF Input Power Junction Temperature ESD Capability

VCtrl

TSTG

Human Body Model 1 ESD Capability RFin Port 2

VESD_HBM −1

VESD_RFin −8
1 Human Body Model ANSI/ESDA/JEDEC JS-001-2012 R = C = 100 pF . 2 IEC 61000-4-2 R = 330 C = 150 pF , contact discharge.

Unit Note / Test Condition
kV RFin versus GND, with
27 nH shunt inductor

Attention Stresses above the max. values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Maximum ratings are absolute ratings exceeding only one of these values may cause irreversible damage to the integrated circuit.
4 Operation Ranges

Table 4 Operation Ranges Parameter

Ambient Temperature RF Frequency Supply Voltage Control Voltage Low Control Voltage High

TA f Vdd VCtrl _L VCtrl _H

Min. -40

Values Typ. 25

Max. 85 6 Vdd

Unit Note / Test Condition

Table 5 RF Input Power Parameter

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Datasheet ID: BGS12SL6E6327XTSA1 637731