KSD401G
KSD401G Datasheet
KSD401
| Part | Datasheet |
|---|---|
KSD401G |
KSD401G (pdf) |
| Related Parts | Information |
|---|---|
|
KSD401O |
KSD401O |
|
KSD401FYTU |
KSD401FYTU |
|
KSD401Y |
KSD401Y |
|
KSD401YTU |
KSD401YTU |
| PDF Datasheet Preview |
|---|
| KSD401 KSD401 TV Vertical Deflection Output • Collector-Base Voltage VCBO=200V • Collector Current IC=2A • Collector Dissipation PC=25W TC=25°C • Complement to KSB546 TO-220 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Parameter VCBO VCEO VEBO IC PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation TC=25°C Junction Temperature Storage Temperature Value 200 150 5 2 25 150 - 55 ~ 150 Units V A W °C °C Electrical Characteristics TC=25°C unless otherwise noted Parameter Test Condition BVCBO BVCEO BVEBO ICBO hFE VCE sat fT Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Current Gain Bandwidth Product IC = 500uA, IE = 0 IC = 10mA, IB = 0 IE = -500uA, IC = 0 VCB = 150V, IE = 0 VCE = 10V, IC = 0.4A IC = 500mA, IB = 50mA VCE = 10V, IC = 0.4A Min. 200 150 Typ. 5 Max. 50 400 Units V µA V MHz hFE Classification Classification hFE Y 120 ~ 240 G 200 ~ 400 2004 Fairchild Semiconductor Corporation Typical Characteristics IC[A], COLLECTOR CURRENT I = 8mA B I = 7mA I = 6mA B I = 5mA I = 4mA B IB = 3mA I = 2mA I = 1mA B |
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