KSD401FYTU

KSD401FYTU Datasheet

KSD401

Part	Datasheet
KSD401FYTU	KSD401FYTU (pdf)

Related Parts	Information
KSD401O	KSD401O
KSD401G	KSD401G
KSD401Y	KSD401Y
KSD401YTU	KSD401YTU

PDF Datasheet Preview
KSD401 KSD401 TV Vertical Deflection Output • Collector-Base Voltage VCBO=200V • Collector Current IC=2A • Collector Dissipation PC=25W TC=25°C • Complement to KSB546 TO-220 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Parameter VCBO VCEO VEBO IC PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation TC=25°C Junction Temperature Storage Temperature Value 200 150 5 2 25 150 - 55 ~ 150 Units V A W °C °C Electrical Characteristics TC=25°C unless otherwise noted Parameter Test Condition BVCBO BVCEO BVEBO ICBO hFE VCE sat fT Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Current Gain Bandwidth Product IC = 500uA, IE = 0 IC = 10mA, IB = 0 IE = -500uA, IC = 0 VCB = 150V, IE = 0 VCE = 10V, IC = 0.4A IC = 500mA, IB = 50mA VCE = 10V, IC = 0.4A Min. 200 150 Typ. 5 Max. 50 400 Units V µA V MHz hFE Classification Classification hFE Y 120 ~ 240 G 200 ~ 400 2004 Fairchild Semiconductor Corporation Typical Characteristics IC[A], COLLECTOR CURRENT I = 8mA B I = 7mA I = 6mA B I = 5mA I = 4mA B IB = 3mA I = 2mA I = 1mA B

PDF Datasheet Preview

KSD401

KSD401

TV Vertical Deflection Output
• Collector-Base Voltage VCBO=200V
• Collector Current IC=2A
• Collector Dissipation PC=25W TC=25°C
• Complement to KSB546

TO-220
1.Base 2.Collector 3.Emitter

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings TC=25°C unless otherwise noted

Parameter

VCBO VCEO VEBO IC PC TJ TSTG

Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation TC=25°C Junction Temperature Storage Temperature

Value 200 150
5 2 25 150 - 55 ~ 150

Units V A W °C °C

Electrical Characteristics TC=25°C unless otherwise noted

Parameter

Test Condition

BVCBO BVCEO BVEBO ICBO hFE VCE sat fT

Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Current Gain Bandwidth Product

IC = 500uA, IE = 0 IC = 10mA, IB = 0 IE = -500uA, IC = 0 VCB = 150V, IE = 0 VCE = 10V, IC = 0.4A IC = 500mA, IB = 50mA VCE = 10V, IC = 0.4A

Min. 200 150

Typ. 5

Max.
50 400

Units V µA

V MHz
hFE Classification

Classification hFE

Y 120 ~ 240

G 200 ~ 400
2004 Fairchild Semiconductor Corporation

Typical Characteristics

IC[A], COLLECTOR CURRENT

I = 8mA B

I = 7mA

I = 6mA B

I = 5mA

I = 4mA B

IB = 3mA

I = 2mA

I = 1mA B

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Datasheet ID: KSD401FYTU 634245