MRF9085LSR5

MRF9085LSR5 Datasheet

Document Number MRF9085 Rev. 11, 5/2006

Part	Datasheet
MRF9085LSR5	MRF9085LSR5 (pdf)

Related Parts	Information
MRF9085LR5	MRF9085LR5

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ARCHIVE INFORMATION ARCHIVE INFORMATION Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of these devices make them ideal for large - signal, common - source amplifier applications in 26 volt base station equipment. • Typical CDMA Performance 880 MHz, 26 Volts, IDQ = 700 mA IS - 95 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13 Output Power 20 Watts Power Gain dB Efficiency 28% Adjacent Channel Power 750 kHz - dBc 30 kHz BW MHz - dBc 30 kHz BW • Capable of Handling 10:1 VSWR, 26 Vdc, 880 MHz, 90 Watts CW Output Power • Internally Matched for Ease of Use • High Gain, High Efficiency and High Linearity • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Excellent Thermal Stability • Characterized with Series Equivalent Large - Signal Impedance Parameters • Low Gold Plating Thickness on Leads, Nominal. • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. MRF9085LR3 MRF9085LSR3 880 MHz, 90 W, 26 V LATERAL N - CHANNEL RF POWER MOSFETs CASE 465 - 06, STYLE 1 NI - 780 MRF9085LR3 CASE 465A - 06, STYLE 1 NI - 780S MRF9085LSR3 Table Maximum Ratings Rating Drain- Source Voltage Gate- Source Voltage Total Device Dissipation TC = 25°C Derate above 25°C Storage Temperature Range Case Operating Temperature Operating Junction Temperature Table Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Symbol VDSS VGS PD Tstg TC TJ Value - +65 - +15 250 - 65 to +150 200 Value Unit Vdc W/°C °C °C °C Unit °C/W Freescale Semiconductor, Inc., 2006, All rights reserved. Freescale Semiconductor RF Product Device Data MRF9085LR3 MRF9085LSR3 4-1 ARCHIVE INFORMATION ARCHIVE INFORMATION Table ESD Protection Characteristics Human Body Model Test Conditions Machine Model MRF9085LR3 MRF9085LSR3 Table Electrical Characteristics TC = 25°C unless otherwise noted Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current VDS = 65 Vdc, VGS = 0 Vdc Zero Gate Voltage Drain Leakage Current VDS = 26 Vdc, VGS = 0 Vdc Gate- Source Leakage Current VGS = 5 Vdc, VDS = 0 Vdc On Characteristics Gate Threshold Voltage VDS = 10 Vdc, ID = 300 uAdc Gate Quiescent Voltage VDS = 26 Vdc, ID = 700 mAdc

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ARCHIVE INFORMATION ARCHIVE INFORMATION

Freescale Semiconductor Technical Data

RF Power Field Effect Transistors

N - Channel Enhancement - Mode Lateral MOSFETs

Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of these devices make them ideal for large - signal, common - source amplifier applications in 26 volt base station equipment.
• Typical CDMA Performance 880 MHz, 26 Volts, IDQ = 700 mA IS - 95 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13 Output Power 20 Watts Power Gain dB Efficiency 28% Adjacent Channel Power 750 kHz - dBc 30 kHz BW MHz - dBc 30 kHz BW
• Capable of Handling 10:1 VSWR, 26 Vdc, 880 MHz, 90 Watts CW Output Power
• Internally Matched for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Excellent Thermal Stability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Low Gold Plating Thickness on Leads, Nominal.
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

MRF9085LR3 MRF9085LSR3
880 MHz, 90 W, 26 V LATERAL N - CHANNEL RF POWER MOSFETs

CASE 465 - 06, STYLE 1 NI - 780

MRF9085LR3

CASE 465A - 06, STYLE 1 NI - 780S

MRF9085LSR3

Table Maximum Ratings Rating

Drain- Source Voltage Gate- Source Voltage Total Device Dissipation TC = 25°C

Derate above 25°C Storage Temperature Range Case Operating Temperature Operating Junction Temperature Table Thermal Characteristics

Characteristic Thermal Resistance, Junction to Case

Symbol VDSS VGS PD

Tstg TC TJ

Value - +65 - +15
250 - 65 to +150 200

Value

Unit Vdc W/°C °C °C °C

Unit °C/W

Freescale Semiconductor, Inc., 2006, All rights reserved.

Freescale Semiconductor RF Product Device Data

MRF9085LR3 MRF9085LSR3 4-1

ARCHIVE INFORMATION ARCHIVE INFORMATION

Table ESD Protection Characteristics

Human Body Model

Test Conditions

Machine Model

MRF9085LR3 MRF9085LSR3

Table Electrical Characteristics TC = 25°C unless otherwise noted

Characteristic

Off Characteristics Zero Gate Voltage Drain Leakage Current VDS = 65 Vdc, VGS = 0 Vdc

Zero Gate Voltage Drain Leakage Current VDS = 26 Vdc, VGS = 0 Vdc

Gate- Source Leakage Current VGS = 5 Vdc, VDS = 0 Vdc

On Characteristics Gate Threshold Voltage VDS = 10 Vdc, ID = 300 uAdc

Gate Quiescent Voltage VDS = 26 Vdc, ID = 700 mAdc

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Datasheet ID: MRF9085LSR5 635615