KSC2669YTA
KSC2669YTA Datasheet
KSC2669
| Part | Datasheet |
|---|---|
KSC2669YTA |
KSC2669YTA (pdf) |
| Related Parts | Information |
|---|---|
KSC2669OBU |
KSC2669OBU |
| PDF Datasheet Preview |
|---|
| KSC2669 KSC2669 FM RADIO RF AMP, MIX, CONV, OSC, IF AMP • High Current Gain Bandwidth Product fT=250MHz TYP. TO-92S 1.Emitter Collector Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Parameter VCBO VCEO VEBO IC PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Value 35 30 4 30 200 150 -55 ~ 150 Units V mA mW °C °C Electrical Characteristics Ta=25°C unless otherwise noted Parameter Test Condition BVCBO BVCEO BVEBO ICBO IEBO hFE VBE on VCE sat fT Cob Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Base-Emitter On Voltage Collector-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance IC=100µA, IE=0 IC=5mA, IB=0 IE=10µA, IC=0 VCB=30V, IE=0 VEB=4V, IC=0 VCE=12V, IC=2mA VCE=6V, IC=1mA IC=10mA, IB=1mA VCE=10V, IC=1mA VCB=10V, IE=0, f=1MHz Min. 35 30 4 Typ. Max. Units V µA µA V MHz pF hFE Classification Classification hFE R 40 ~ 80 O 70 ~ 140 Y 120 ~ 240 2002 Fairchild Semiconductor Corporation KSC2669 Typical Characteristics IC[mA], COLLECTOR CURRENT VBE sat , VCE sat [V], SATURATION VOLTAGE 90µA 80µA 70µA 60µA 50µA |
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