SPD14N06S2-80
SPD14N06S2-80 Datasheet
SPD14N06S2-80
| Part | Datasheet |
|---|---|
SPD14N06S2-80 |
SPD14N06S2-80 (pdf) |
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| Power-Transistor Feature • N-Channel • Enhancement mode • 175°C operating temperature • Avalanche rated • dv/dt rated SPD14N06S2-80 Product Summary RDS on P- TO252 -3-11 Type Package Ordering Code Marking SPD14N06S2-80 P- TO252 -3-11 Q67060-S7423 2N0680 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current TC=25°C Pulsed drain current TC=25°C Avalanche energy, single pulse ID=14A, VDD=25V, IS=14A, VDS=44V, di/dt=200A/µs, Tjmax=175°C Gate source voltage Power dissipation TC=25°C Operating and storage temperature IEC climatic category DIN IEC 68-1 ID puls EAS EAR dv/dt VGS Ptot Tj , Tstg Value 17 12 68 ±20 30 +175 55/175/56 Unit A kV/µs V W °C 2003-05-09 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: min. footprint 6 cm2 cooling area 2 SPD14N06S2-80 Values Unit min. typ. max. RthJC RthJA - K/W - 100 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Values Unit min. typ. max. Static Characteristics |
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