DF75R12W1H4FB11BOMA1
DF75R12W1H4FB11BOMA1 Datasheet
DF75R12W1H4F_B11
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DF75R12W1H4FB11BOMA1 |
DF75R12W1H4FB11BOMA1 (pdf) |
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| IGBT-Module IGBT-modules DF75R12W1H4F_B11 • Al2O3 Substrat mit kleinem thermischen Widerstand • • • VCES = 1200V IC nom = 75A / ICRM = 150A • • • IGBT-Module IGBT-modules DF75R12W1H4F_B11 Tvj = 25°C TC = 80°C TC = 80°C tp = 10 ms, Tvj = 25°C tp = 10 ms, Tvj = 150°C Grenzlastintegral tp = 10 ms, Tvj = 25°C tp = 10 ms, Tvj = 150°C Durchlassspannung Tvj = 150°C, IF = 50 A Sperrstrom Tvj = 150°C, VR = 1200 V Tvj = 25°C TC = 80°C TC = 80°C tp = 10 ms, Tvj = 25°C tp = 10 ms, Tvj = 150°C Grenzlastintegral tp = 10 ms, Tvj = 25°C tp = 10 ms, Tvj = 150°C Durchlassspannung Tvj = 150°C, IF = 30 A Sperrstrom Tvj = 150°C, VR = 1200 V VRRM 1200 IFRMSM IRMSM IFSM 600 480 1800 1150 min. typ. max. 0,80 V 0,10 mA RthJC 0,40 0,45 K/W RthCH 0,40 |
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