IRFU220_R4941

IRFU220_R4941 Datasheet

IRFR220, IRFU220

Part	Datasheet
IRFU220_R4941	IRFU220_R4941 (pdf)

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Data Sheet IRFR220, IRFU220 January 2002 4.6A, 200V, Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA9600. Ordering Information PACKAGE BRAND IRFR220 TO-252AA IFR220 IRFU220 TO-251AA IFU220 NOTE When ordering, use the entire part number. • 4.6A, 200V • rDS ON = • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Packaging JEDEC TO-251AA SOURCE DRAIN GATE DRAIN FLANGE JEDEC TO-252AA GATE DRAIN FLANGE DRAIN SOURCE 2002 Fairchild Semiconductor Corporation IRFR220, IRFU220 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Drain to Source Voltage Note 1 VDS Drain to Gate Voltage RGS = Note 1 VDGR Continuous Drain TC = 100oC Current Pulsed Drain Current Note 3 IDM Gate to Source Voltage VGS Maximum Power Dissipation PD Linear Derating Factor Single Pulse Avalanche Energy Rating Note 4 EAS Operating and Storage Temperature TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in 1.6mm from Case for 10s. TL Package Body for 10s, See Techbrief 334 Tpkg IRFR220, IRFU220 200 18 ± 20 50 85 -55 to 150 300 260 UNITS V A V W W/oC mJ oC CAUTION Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this is not implied. NOTE TJ = 25oC to 125oC. Electrical TC = 25oC, Unless Otherwise PARAMETER TEST CONDITIONS Drain to Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current On-State Drain Current Note 2 BVDSS ID = 250µA, VGS = 0V, Figure 10 VGS TH VGS = VDS, ID = 250µA IDSS VDS = Rated BVDSS, VGS = 0V VDS = x Rated BVDSS, VGS = 0V, TJ = 125oC -

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Data Sheet

IRFR220, IRFU220

January 2002
4.6A, 200V, Ohm, N-Channel Power MOSFETs

These are N-Channel enhancement mode silicon gate power effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.

Formerly developmental type TA9600.
Ordering Information

PACKAGE

BRAND

IRFR220

TO-252AA

IFR220

IRFU220

TO-251AA

IFU220
NOTE When ordering, use the entire part number.
• 4.6A, 200V
• rDS ON =
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”

Packaging

JEDEC TO-251AA

SOURCE DRAIN GATE

DRAIN FLANGE

JEDEC TO-252AA

GATE

DRAIN FLANGE

DRAIN

SOURCE
2002 Fairchild Semiconductor Corporation

IRFR220, IRFU220

Absolute Maximum Ratings TC = 25oC, Unless Otherwise

Drain to Source Voltage Note 1 VDS

Drain to Gate Voltage RGS = Note 1 VDGR

Continuous Drain TC = 100oC

Current

Pulsed Drain Current Note 3 IDM

Gate to Source Voltage VGS

Maximum Power Dissipation PD

Linear Derating Factor

Single Pulse Avalanche Energy Rating Note 4 EAS Operating and Storage Temperature TJ, TSTG Maximum Temperature for Soldering

Leads at 0.063in 1.6mm from Case for 10s. TL Package Body for 10s, See Techbrief 334 Tpkg

IRFR220, IRFU220 200 18 ± 20 50 85
-55 to 150
300 260

UNITS V A V W

W/oC mJ oC

CAUTION Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this is not implied.

NOTE TJ = 25oC to 125oC.

Electrical TC = 25oC, Unless Otherwise

PARAMETER

TEST CONDITIONS

Drain to Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current

On-State Drain Current Note 2

BVDSS ID = 250µA, VGS = 0V, Figure 10

VGS TH VGS = VDS, ID = 250µA

IDSS VDS = Rated BVDSS, VGS = 0V

VDS = x Rated BVDSS, VGS = 0V, TJ = 125oC -

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Datasheet ID: IRFU220_R4941 634051