HUFA75329P3

HUFA75329P3 Datasheet

HUFA75329G3, HUFA75329P3, HUFA75329S3S

Part	Datasheet
HUFA75329P3	HUFA75329P3 (pdf)

Related Parts	Information
HUFA75329S3ST	HUFA75329S3ST
HUFA75329S3S	HUFA75329S3S

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HUFA75329G3, HUFA75329P3, HUFA75329S3S Data Sheet June 2002 49A, 55V, Ohm, N-Channel UltraFET Power MOSFETs Formerly developmental type TA75329. Ordering Information PACKAGE BRAND HUFA75329G3 TO-247 75329G HUFA75329P3 TO-220AB 75329P HUFA75329S3S TO-263AB 75329S NOTE When ordering, use the entire part number. Add the suffix T to obtain the TO-263AB variant in tape and reel, e.g., HUFA75329S3ST. Packaging JEDEC STYLE TO-247 SOURCE DRAIN GATE • 49A, 55V • Ultra Low On-Resistance, rDS ON = • Temperature Compensating and SABER Models - Available on the web at • Thermal Impedance PSPICE and SABER Models • Peak Current vs Pulse Width Curve • UIS Rating Curve • Related Literature - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards” JEDEC TO-220AB DRAIN FLANGE SOURCE DRAIN GATE DRAIN TAB JEDEC TO-263AB GATE SOURCE DRAIN FLANGE This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: Reliability data can be found at All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification. 2002 Fairchild Semiconductor Corporation HUFA75329G3, HUFA75329P3, HUFA75329S3S Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified UNITS Drain to Source Voltage Note 1 VDSS Drain to Gate Voltage RGS = Note 1 VDGR Gate to Source Voltage VGS Drain Current ±20 Continuous Figure ID Pulsed Drain Current IDM Pulsed Avalanche Rating EAS Power Dissipation Derate Above 25oC Operating and Storage Temperature .TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in 1.6mm from Case for 10s TL Package Body for 10s, See Techbrief 334 Tpkg 49 Figure 4 Figures 6, 14, 15 128 -55 to 175 300 260 W/oC CAUTION Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE TJ = 25oC to 150oC. Electrical Specifications TC = 25oC, Unless Otherwise Specified PARAMETER TEST CONDITIONS OFF STATE SPECIFICATIONS Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current ON STATE SPECIFICATIONS Gate to Source Threshold Voltage Drain to Source On Resistance THERMAL SPECIFICATIONS Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient

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HUFA75329G3, HUFA75329P3, HUFA75329S3S

Data Sheet

June 2002
49A, 55V, Ohm, N-Channel UltraFET Power MOSFETs

Formerly developmental type TA75329.
Ordering Information

PACKAGE

BRAND

HUFA75329G3

TO-247
75329G

HUFA75329P3

TO-220AB
75329P

HUFA75329S3S

TO-263AB
75329S
NOTE When ordering, use the entire part number. Add the suffix T to obtain the TO-263AB variant in tape and reel, e.g., HUFA75329S3ST.

Packaging

JEDEC STYLE TO-247

SOURCE DRAIN GATE
• 49A, 55V
• Ultra Low On-Resistance, rDS ON =
• Temperature Compensating and SABER

Models - Available on the web at
• Thermal Impedance PSPICE and SABER Models
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature - TB334, “Guidelines for Soldering Surface Mount

Components to PC Boards”

JEDEC TO-220AB

DRAIN FLANGE

SOURCE DRAIN GATE

DRAIN TAB

JEDEC TO-263AB

GATE SOURCE

DRAIN FLANGE

This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at:

Reliability data can be found at All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
2002 Fairchild Semiconductor Corporation

HUFA75329G3, HUFA75329P3, HUFA75329S3S

Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified

UNITS

Drain to Source Voltage Note 1 VDSS Drain to Gate Voltage RGS = Note 1 VDGR Gate to Source Voltage VGS Drain Current
±20

Continuous Figure ID

Pulsed Drain Current IDM

Pulsed Avalanche Rating EAS

Power Dissipation Derate Above 25oC

Operating and Storage Temperature .TJ, TSTG Maximum Temperature for Soldering

Leads at 0.063in 1.6mm from Case for 10s TL Package Body for 10s, See Techbrief 334 Tpkg
49 Figure 4 Figures 6, 14, 15
128 -55 to 175
300 260

W/oC

CAUTION Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTE TJ = 25oC to 150oC.

Electrical Specifications TC = 25oC, Unless Otherwise Specified

PARAMETER

TEST CONDITIONS

OFF STATE SPECIFICATIONS Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current

Gate to Source Leakage Current ON STATE SPECIFICATIONS Gate to Source Threshold Voltage Drain to Source On Resistance THERMAL SPECIFICATIONS Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived HUFA75329P3 Datasheet file may be downloaded here without warranties.

Datasheet ID: HUFA75329P3 633976