PTFA181001E V4 T500

PTFA181001E V4 T500 Datasheet


PTFA181001E PTFA181001F

Part Datasheet
PTFA181001E V4 T500 PTFA181001E V4 T500 PTFA181001E V4 T500 (pdf)
Related Parts Information
PTFA181001FV4XWSA1 PTFA181001FV4XWSA1 PTFA181001FV4XWSA1
PTFA181001EV4R250XTMA1 PTFA181001EV4R250XTMA1 PTFA181001EV4R250XTMA1
PTFA181001EV4XWSA1 PTFA181001EV4XWSA1 PTFA181001EV4XWSA1
PTFA181001FV4R250FTMA1 PTFA181001FV4R250FTMA1 PTFA181001FV4R250FTMA1
PDF Datasheet Preview
PTFA181001E PTFA181001F

Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1805 1880 MHz

The PTFA181001E and PTFA181001F are 100-watt LDMOS FETs designed for EDGE and WCDMA power amplifier applications in the DCS band. Features include input and output matching, and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability.

PTFA181001E Package H-36248-2

PTFA181001F Package H-37248-2

IM3 dBc , ACPR dBc Drain Efficiency %
2-Carrier WCDMA Drive-up VDD = 28 V, IDQ = 750 mA, = 1880 MHz, 3GPP WCDMA
signal, P/A R = 8 dB, 10 MHz carrier spacing

Efficiency
-53 34

ACPR 10

Average Output Power dBm
• Thermally-enhanced packages
• Broadband internal matching
• Typical EDGE performance at MHz, 28 V - Average output power = 45 W - Linear Gain = dB - Efficiency = 36% - EVM RMS =
• Typical CW performance, 1880 MHz, 28 V - Output power at = 120 W - Gain dB - Efficiency = 52%
• Integrated ESD protection Human Body Model, Class 2 minimum
• Excellent thermal stability, low HCI drift
• Capable of handling 10:1 VSWR 28 V, 100 W CW output power
• Pb-free and RoHS compliant

RF Characteristics

EDGE Measurements not subject to production by design/characterization in Infineon test fixture

VDD = 28 V, IDQ = 750 mA, POUT = 45 W, = MHz

Characteristic

Symbol Min Typ

Unit

Error Vector Magnitude

RMS EVM

Modulation Spectrum 400 KHz

ACPR

Modulation Spectrum 600 KHz

ACPR

Gain Drain Efficiency

All published data at TCASE = 25°C unless otherwise indicated
*See Infineon distributor for future availability.

ESD Electrostatic discharge sensitive handling precautions!

Data Sheet
1 of 11

PTFA181001E PTFA181001F

RF Characteristics cont.

Two-tone Measurements tested in Infineon test fixture VDD = 28 V, IDQ = 750 mA, POUT = 100 W PEP, = 1850 MHz, tone spacing = 1 MHz
Ordering Information

Type and Version PTFA181001E V4 PTFA181001F V4

Package Type H-36248-2 H-37248-2

Package Description Thermally-enhanced slotted flange, single-ended Thermally-enhanced earless flange, single-ended

Marking PTFA181001E PTFA181001F
*See Infineon distributor for future availability. Data Sheet
2 of 11

PTFA181001E PTFA181001F

Drain Efficiency %

Typical Performance data taken in a production test fixture

EVM RMS avg. %

Edge EVM and Modulation Spectrum vs. Quiescent Current

VDD = 28 V, = MHz, POUT = dBm
400 kHz -70
600 kHz -80

Quiescent Current A

Modulation Spectrum dBc Modulation Spectrum dBc

EDGE Modulation Spectrum Performance VDD = 28 V, IDQ = 750 mA, = MHz
-40 400 kHz
45 Efficiency
600 kHz
-100

Output Power dBm

EVM RMS avg. %

EDGE EVM Performance VDD = 28 V, IDQ = 750 mA, = MHz

Efficiency

Output Power dBm

Drain Efficiency % IMD dBc

Intermodulation Distortion vs. Output Power as measured in a broadband circuit

VDD = 28 V, IDQ = 750 mA, = 1879 MHz, = 1880 MHz
-20 -25 -30 -35 -40 -45 -50 -55 -60 -65
3rd Order
5th 7th
39 41 43 45 47 49 Output Power, Avg. dBm

Data Sheet
3 of 11

Typical Performance cont.

Broadband CW Performance at P-1dB VDD = 28 V, IDQ = 750 m A

Gain dB

Efficiency 55
16 Gain
More datasheets: IDT85304-01PGG | IDT85304-01PGG8 | IDT85304-01PGGI | IDT85304-01PGGI8 | MDM-37PH002L | RD1-4320 | VW2X30-16IO1 | VW2X30-12IO1 | VW2X30-14IO1 | VW2X30-08IO1


Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived PTFA181001EV4T500 Datasheet file may be downloaded here without warranties.

Datasheet ID: PTFA181001EV4T500 638503