PTFA181001EV4R250XTMA1
PTFA181001EV4R250XTMA1 Datasheet
PTFA181001E PTFA181001F
| Part | Datasheet |
|---|---|
PTFA181001EV4R250XTMA1 |
PTFA181001EV4R250XTMA1 (pdf) |
| Related Parts | Information |
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PTFA181001E V4 T500 |
PTFA181001E V4 T500 |
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PTFA181001FV4XWSA1 |
PTFA181001FV4XWSA1 |
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PTFA181001EV4XWSA1 |
PTFA181001EV4XWSA1 |
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PTFA181001FV4R250FTMA1 |
PTFA181001FV4R250FTMA1 |
| PDF Datasheet Preview |
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| PTFA181001E PTFA181001F Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1805 1880 MHz The PTFA181001E and PTFA181001F are 100-watt LDMOS FETs designed for EDGE and WCDMA power amplifier applications in the DCS band. Features include input and output matching, and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA181001E Package H-36248-2 PTFA181001F Package H-37248-2 IM3 dBc , ACPR dBc Drain Efficiency % 2-Carrier WCDMA Drive-up VDD = 28 V, IDQ = 750 mA, = 1880 MHz, 3GPP WCDMA signal, P/A R = 8 dB, 10 MHz carrier spacing Efficiency -53 34 ACPR 10 Average Output Power dBm • Thermally-enhanced packages • Broadband internal matching • Typical EDGE performance at MHz, 28 V - Average output power = 45 W - Linear Gain = dB - Efficiency = 36% - EVM RMS = • Typical CW performance, 1880 MHz, 28 V - Output power at = 120 W - Gain dB - Efficiency = 52% • Integrated ESD protection Human Body Model, Class 2 minimum • Excellent thermal stability, low HCI drift • Capable of handling 10:1 VSWR 28 V, 100 W CW output power • Pb-free and RoHS compliant RF Characteristics EDGE Measurements not subject to production by design/characterization in Infineon test fixture VDD = 28 V, IDQ = 750 mA, POUT = 45 W, = MHz Characteristic Symbol Min Typ Unit Error Vector Magnitude RMS EVM Modulation Spectrum 400 KHz ACPR Modulation Spectrum 600 KHz ACPR Gain Drain Efficiency All published data at TCASE = 25°C unless otherwise indicated *See Infineon distributor for future availability. ESD Electrostatic discharge sensitive handling precautions! Data Sheet 1 of 11 PTFA181001E PTFA181001F RF Characteristics cont. Two-tone Measurements tested in Infineon test fixture VDD = 28 V, IDQ = 750 mA, POUT = 100 W PEP, = 1850 MHz, tone spacing = 1 MHz Ordering Information Type and Version PTFA181001E V4 PTFA181001F V4 Package Type H-36248-2 H-37248-2 Package Description Thermally-enhanced slotted flange, single-ended Thermally-enhanced earless flange, single-ended Marking PTFA181001E PTFA181001F *See Infineon distributor for future availability. Data Sheet 2 of 11 PTFA181001E PTFA181001F Drain Efficiency % Typical Performance data taken in a production test fixture EVM RMS avg. % Edge EVM and Modulation Spectrum vs. Quiescent Current VDD = 28 V, = MHz, POUT = dBm 400 kHz -70 600 kHz -80 Quiescent Current A Modulation Spectrum dBc Modulation Spectrum dBc EDGE Modulation Spectrum Performance VDD = 28 V, IDQ = 750 mA, = MHz -40 400 kHz 45 Efficiency 600 kHz -100 Output Power dBm EVM RMS avg. % EDGE EVM Performance VDD = 28 V, IDQ = 750 mA, = MHz Efficiency Output Power dBm Drain Efficiency % IMD dBc Intermodulation Distortion vs. Output Power as measured in a broadband circuit VDD = 28 V, IDQ = 750 mA, = 1879 MHz, = 1880 MHz -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 3rd Order 5th 7th 39 41 43 45 47 49 Output Power, Avg. dBm Data Sheet 3 of 11 Typical Performance cont. Broadband CW Performance at P-1dB VDD = 28 V, IDQ = 750 m A Gain dB Efficiency 55 16 Gain |
| More datasheets: IDT85304-01PGGI | IDT85304-01PGGI8 | MDM-37PH002L | RD1-4320 | VW2X30-16IO1 | VW2X30-12IO1 | VW2X30-14IO1 | VW2X30-08IO1 | PTFA181001E V4 T500 | PTFA181001FV4XWSA1 |
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