APTM10HM09FTG
APTM10HM09FTG Datasheet
APTM10HM09FTG
| Part | Datasheet |
|---|---|
APTM10HM09FTG |
APTM10HM09FTG (pdf) |
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| APTM10HM09FTG Full - Bridge MOSFET Power Module VDSS = 100V RDSon = typ Tj = 25°C ID = 139A Tc = 25°C VBUS O UT1 O UT2 G2 S2 NT C1 0/V BU S G4 S4 NT C2 Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • Power MOS FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic diode - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - Lead frames for power connections • Internal thermistor for temperature monitoring • High level of integration G3 S3 VBUS S1 G1 G4 S4 0/VBUS S2 G2 OUT2 OUT1 NTC2 NTC1 Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink isolated package • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • RoHS Compliant Absolute maximum ratings Parameter Max ratings Unit VDSS IDM VGS RDSon Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Tc = 25°C Tc = 80°C ±30 PD Maximum Power Dissipation Tc = 25°C IAR Avalanche current repetitive and non repetitive EAR Repetitive Avalanche Energy EAS Single Pulse Avalanche Energy 3000 These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on APTM10HM09FTG All ratings Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic IDSS Zero Gate Voltage Drain Current |
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