FMS6G10US60

FMS6G10US60 Datasheet

FMS6G10US60 Compact & Complex Module

Part	Datasheet
FMS6G10US60	FMS6G10US60 (pdf)

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FMS6G10US60 Compact & Complex Module August 2005 FMS6G10US60 Compact & Complex Module • Short Circuit Rated 10µs TC = 100°C, VGE = 15V • High Speed Switching • Low Saturation Voltage VCE sat = V IC = 10A • High Input Impedance • Built-in 3 Phase Rectifier Circuit • Fast & Soft Anti-Parallel FWD • Built-in NTC Thermistor • AC & DC Motor Controls • General Purpose Inverters • Robotics • Servo Controls • UPS Fairchild IGBT Power Module provides low conduction and switching losses as well as short circuit ruggedness. It’s designed for the applications such as motor control and general inverters where short-circuit ruggedness is required. Package Code 25PM-AA 45 21 Internal Circuit Diagram 2005 Fairchild Semiconductor Corporation FMS6G10US60 Compact & Complex Module Absolute Maximum Ratings TC = 25°C unless otherwise noted Inverter Converter VCES VGES IC ICM 1 IF IFM PD TSC VRRM IO IFSM Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Pulsed Collector Current TC = 80°C Diode Continuous Forward Current TC = 80°C Diode Maximum Forward Current TC = 25°C TC = 100°C Average Output Rectified Current Surge Forward Current 1Cycle at 60Hz, Peak value Non-Repetitive Energy pulse 1Cycle at 60Hz Common TSTG VISO Mounting Torque Operating Junction Temperature Storage Temperature Range Isolation Voltage Mounting part Screw AC 1minute M4 Notes 1 Repetitive rating Pulse width limited by max. junction temperature Package Marking and Ordering Information Device Marking FMS6G10US60 Device FMS6G10US60 Package 25PM-AA Reel Size 2 TMC2 Relibility test was done under -45°C ~ 125°C FMS6G10US60 600 ± 20 10 20 10 20 66 10 1600 10 100 42 -40 to +150 -40 to +125 2500 Tape Width Units V A W µs V A A2s °C °C V N•m Quantity FMS6G10US60 Compact & Complex Module Electrical Characteristics of IGBT Inverter TC = 25°C unless otherwise noted Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVCES ICES IGES Collector-Emitter Breakdown Voltage Temperature Coeff. of Breakdown Voltage Collector Cut-Off Current Gate - Emitter Leakage Current VGE = 0V, IC = 250µA VGE = 0V, IC = 1mA VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V On Characteristics VGE th VCE sat Gate - Emitter Threshold Voltage Collector to Emitter Saturation Voltage IC = 10mA, VCE = VGE IC = 10A, VGE = 15V Dynamic Characteristics Cies Coes Cres VCE = 30V, VGE = 0V, f = 1MHz Switching Characteristics td on tr td off tf Eon Eoff td on tr td off tf Eon Eoff Tsc Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Short Circuit Withstand Time Total Gate Charge Gate-Emitter Charge

PDF Datasheet Preview

FMS6G10US60 Compact & Complex Module

August 2005

FMS6G10US60

Compact & Complex Module
• Short Circuit Rated 10µs TC = 100°C, VGE = 15V
• High Speed Switching
• Low Saturation Voltage VCE sat = V IC = 10A
• High Input Impedance
• Built-in 3 Phase Rectifier Circuit
• Fast & Soft Anti-Parallel FWD
• Built-in NTC Thermistor
• AC & DC Motor Controls
• General Purpose Inverters
• Robotics
• Servo Controls
• UPS

Fairchild IGBT Power Module provides low conduction and switching losses as well as short circuit ruggedness. It’s designed for the applications such as motor control and general inverters where short-circuit ruggedness is required.

Package Code 25PM-AA
45 21

Internal Circuit Diagram
2005 Fairchild Semiconductor Corporation

FMS6G10US60 Compact & Complex Module

Absolute Maximum Ratings TC = 25°C unless otherwise noted

Inverter Converter

VCES VGES IC ICM 1 IF IFM PD TSC VRRM IO IFSM

Collector-Emitter Voltage

Gate-Emitter Voltage

Collector Current Pulsed Collector Current

TC = 80°C

Diode Continuous Forward Current TC = 80°C Diode Maximum Forward Current

TC = 25°C TC = 100°C

Average Output Rectified Current

Surge Forward Current 1Cycle at 60Hz, Peak value Non-Repetitive

Energy pulse 1Cycle at 60Hz

Common

TSTG

VISO

Mounting Torque

Operating Junction Temperature Storage Temperature Range Isolation Voltage Mounting part Screw

AC 1minute M4

Notes 1 Repetitive rating Pulse width limited by max. junction temperature
Package Marking and Ordering Information

Device Marking

FMS6G10US60

Device

FMS6G10US60

Package
25PM-AA

Reel Size
2 TMC2 Relibility test was done under -45°C ~ 125°C

FMS6G10US60
600 ± 20 10 20 10 20 66 10 1600 10 100
42 -40 to +150 -40 to +125
2500

Tape Width

Units

V A W µs V A

A2s °C °C V N•m

Quantity

FMS6G10US60 Compact & Complex Module

Electrical Characteristics of IGBT Inverter TC = 25°C unless otherwise noted

Parameter

Test Conditions

Min.

Typ. Max. Units

Off Characteristics

BVCES ICES IGES

Collector-Emitter Breakdown Voltage Temperature Coeff. of Breakdown Voltage Collector Cut-Off Current Gate - Emitter Leakage Current

VGE = 0V, IC = 250µA VGE = 0V, IC = 1mA

VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V

On Characteristics

VGE th VCE sat

Gate - Emitter Threshold Voltage Collector to Emitter Saturation Voltage

IC = 10mA, VCE = VGE IC = 10A, VGE = 15V

Dynamic Characteristics

Cies Coes Cres

VCE = 30V, VGE = 0V, f = 1MHz

Switching Characteristics
td on tr td off tf Eon Eoff td on tr td off tf Eon Eoff Tsc

Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Short Circuit Withstand Time

Total Gate Charge

Gate-Emitter Charge

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Datasheet ID: FMS6G10US60 514935