FDW254P

FDW254P Datasheet

FDW254P

Part	Datasheet
FDW254P	FDW254P (pdf)

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FDW254P June 2008 FDW254P P-Channel 1.8V Specified MOSFET This P-Channel 1.8V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage 1.8V . • Load switch • Motor drive • DC/DC conversion • Power management • A, V. RDS ON = 12 VGS = V RDS ON = 15 VGS = V RDS ON = VGS = V • Rds ratings for use with V logic • Low gate charge • High performance trench technology for extremely low RDS ON • Low profile TSSOP-8 package TSSOP-8 Pin 1 Absolute Maximum Ratings TA=25oC unless otherwise noted VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Power Dissipation Note 1 Note 1a Note 1b TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Ambient Note 1a Note 1b Package Marking and Ordering Information Device Marking Device Reel Size 254P FDW254P 13’’ Ratings to +150 96 208 Tape width 12mm Units V A W °C °C/W Quantity 2500 units 2008 Fairchild Semiconductor Corporation FDW254P Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS Breakdown Voltage IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current IGSSF Leakage, Forward IGSSR VGS = 0 V, ID = µA ID = µA, Referenced to 25°C VDS = V, VGS = V, VGS = 8 V VGS = 0 V VDS = 0 V VDS = 0 V On Characteristics Note 2 VGS th Gate Threshold Voltage RDS on Gate Threshold Voltage Temperature Coefficient Static

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FDW254P

June 2008

FDW254P

P-Channel 1.8V Specified MOSFET

This P-Channel 1.8V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage 1.8V .
• Load switch
• Motor drive
• DC/DC conversion
• Power management
• A, V.

RDS ON = 12 VGS = V RDS ON = 15 VGS = V RDS ON = VGS = V
• Rds ratings for use with V logic
• Low gate charge
• High performance trench technology for extremely
low RDS ON
• Low profile TSSOP-8 package

TSSOP-8

Pin 1

Absolute Maximum Ratings TA=25oC unless otherwise noted

VDSS VGSS ID

Parameter

Drain-Source Voltage Gate-Source Voltage Drain Current Continuous

Pulsed Power Dissipation

Note 1

Note 1a Note 1b

TJ, TSTG

Operating and Storage Junction Temperature Range

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

Note 1a Note 1b
Package Marking and Ordering Information

Device Marking

Device

Reel Size
254P

FDW254P
13’’

Ratings
to +150
96 208

Tape width 12mm

Units

V A W °C
°C/W

Quantity 2500 units
2008 Fairchild Semiconductor Corporation

FDW254P

Electrical Characteristics

Parameter

TA = 25°C unless otherwise noted

Test Conditions

Min Typ Max Units

Off Characteristics

BVDSS

Breakdown Voltage

IDSS

Breakdown Voltage Temperature Coefficient

Zero Gate Voltage Drain Current

IGSSF

Leakage, Forward

IGSSR

VGS = 0 V, ID = µA

ID = µA, Referenced to 25°C

VDS = V, VGS = V, VGS = 8 V

VGS = 0 V VDS = 0 V VDS = 0 V

On Characteristics Note 2

VGS th

Gate Threshold Voltage

RDS on

Gate Threshold Voltage Temperature Coefficient

Static

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Datasheet ID: FDW254P 514421