FMG1G100US60H

FMG1G100US60H Datasheet

FMG1G100US60H

Part	Datasheet
FMG1G100US60H	FMG1G100US60H (pdf)

PDF Datasheet Preview
FMG1G100US60H FMG1G100US60H Molding Type Module Fairchild’s Insulated Gate Bipolar Transistor IGBT power modules provide low conduction and switching losses as well as short circuit ruggedness. They are designed for applications such as motor control, uninterrupted power supplies UPS and general inverters where short circuit ruggedness is a required feature. • UL Certified No. E209204 • Short Circuit rated 10us TC = 100°C, VGE = 15V • High Speed Switching • Low Saturation Voltage VCE sat = V IC = 100A • High Input Impedance • Fast & Soft Anti-Parallel FWD Application • AC & DC Motor Controls • General Purpose Inverters • Robotics • Servo Controls • UPS IGBT Package Code 7PM-GA E1/C2 G1 E1 Internal Circuit Diagram Absolute Maximum Ratings TC = 25°C unless otherwise noted VCES VGES IC ICM 1 IF IFM TSC PD TJ Tstg Viso Mounting Torque Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Pulsed Collector Current Diode Continuous Forward Current Diode Maximum Forward Current Short Circuit Withstand Time Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Isolation Voltage Power Terminals Screw M5 Mounting Screw M5 TC = 25°C TC = 100°C TC = 100°C TC = 25°C AC 1minute Notes 1 Repetitive rating Pulse width limited by max. junction temperature FMG1G100US60H 600 ± 20 100 200 100 200 10 400 -40 to +150 -40 to +125 2500 Units V A us W °C °C V N.m N.m 2002 Fairchild Semiconductor Corporation FMG1G100US60H Electrical Characteristics of IGBT TC = 25°C unless otherwise noted Parameter Test Conditions Off Characteristics BVCES ICES IGES Collector-Emitter Breakdown Voltage Temperature Coeff. of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current On Characteristics VGE th VCE sat G-E Threshold Voltage Collector to Emitter Saturation Voltage VGE = 0V, IC = 250uA VGE = 0V, IC = 1mA VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V VGE = 0V, IC=100mA IC = 100A, VGE = 15V Dynamic Characteristics Cies Coes Cres Switching Characteristics td on tr td off tf Eon Eoff Ets td on tr td off tf Eon Eoff Ets

PDF Datasheet Preview

FMG1G100US60H

FMG1G100US60H

Molding Type Module

Fairchild’s Insulated Gate Bipolar Transistor IGBT power modules provide low conduction and switching losses as well as short circuit ruggedness. They are designed for applications such as motor control, uninterrupted power supplies UPS and general inverters where short circuit ruggedness is a required feature.
• UL Certified No. E209204
• Short Circuit rated 10us TC = 100°C, VGE = 15V
• High Speed Switching
• Low Saturation Voltage VCE sat = V IC = 100A
• High Input Impedance
• Fast & Soft Anti-Parallel FWD

Application
• AC & DC Motor Controls
• General Purpose Inverters
• Robotics
• Servo Controls
• UPS

IGBT

Package Code 7PM-GA

E1/C2

G1 E1

Internal Circuit Diagram

Absolute Maximum Ratings TC = 25°C unless otherwise noted

VCES VGES IC ICM 1 IF IFM TSC PD TJ Tstg Viso

Mounting Torque

Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Pulsed Collector Current Diode Continuous Forward Current Diode Maximum Forward Current Short Circuit Withstand Time Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Isolation Voltage Power Terminals Screw M5 Mounting Screw M5

TC = 25°C TC = 100°C TC = 100°C TC = 25°C

AC 1minute

Notes 1 Repetitive rating Pulse width limited by max. junction temperature

FMG1G100US60H 600 ± 20 100 200 100 200 10 400
-40 to +150 -40 to +125
2500

Units V A us W °C °C V

N.m N.m
2002 Fairchild Semiconductor Corporation

FMG1G100US60H

Electrical Characteristics of IGBT TC = 25°C unless otherwise noted

Parameter

Test Conditions

Off Characteristics

BVCES ICES IGES

Collector-Emitter Breakdown Voltage Temperature Coeff. of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current

On Characteristics

VGE th VCE sat

G-E Threshold Voltage Collector to Emitter Saturation Voltage

VGE = 0V, IC = 250uA VGE = 0V, IC = 1mA VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V

VGE = 0V, IC=100mA IC = 100A, VGE = 15V

Dynamic Characteristics

Cies Coes Cres

Switching Characteristics
td on tr td off tf Eon Eoff Ets td on tr td off tf Eon Eoff Ets

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived FMG1G100US60H Datasheet file may be downloaded here without warranties.

Datasheet ID: FMG1G100US60H 514893