MSA-0870

MSA-0870 Datasheet

MSA-0870 Cascadable Silicon Bipolar MMIC Amplifier

Part	Datasheet
MSA-0870	MSA-0870 (pdf)

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MSA-0870 Cascadable Silicon Bipolar MMIC Amplifier Data Sheet The MSA-0870 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit MMIC housed in a hermetic, high reliability package. This MMIC is designed for use as a general purpose 50Ω gain block above GHz and can be used as a high gain transistor below this frequency. Typical applications include and moderate band IF and RF amplifiers in industrial and military applications. • Usable Gain to GHz • High Gain dB Typical at GHz dB Typical at GHz • Low Noise Figure dB Typical at GHz • Hermetic Gold-ceramic Microstrip Package The MSA-series is fabricated using Avago’s 10 GHz fT, 25 GHz fMAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, and reliability. The use of an external bias resistor for temperature and current stability also bias flexibility. 70 mil Package Typical Biasing Configuration R bias VCC > 10 V C block IN 3 1 MSA RFC Optional C block Vd = V MSA-0870 Absolute Maximum Ratings Parameter Absolute Maximum[1] Device Current Power Dissipation[2,3] 80 mA 750 mW RF Input Power +13 dBm Junction Temperature 200°C Storage Temperature to 200°C Permanent damage may occur if any of these limits are exceeded. TCASE = 25°C. Derate at mW/°C for TC > 88°C. The small spot size of this technique results in a higher, though more accurate determination of than do alternate methods. Thermal Resistance[2,4] = 150°C/W Electrical Specifications[1], TA = 25°C Parameters and Test Conditions Id = 36 mA, ZO = 50 Ω Units Min. Typ. Max. Power Gain \|S21\| 2 f = GHz f = GHz 22.0 23.5 25.0 f = GHz Input VSWR Output VSWR f = to GHz 2.0:1 f = to GHz Ordering Information Part Numbers MSA-0870 No. of Devices 100 Comments Bulk 70 mil Package Dimensions GROUND RF INPUT RF OUTPUT AND BIAS ± ± 2 GROUND unless otherwise specified Dimensions are in Tolerances in .xxx = ± mm .xx = ± For product information and a complete list of distributors, please go to our web site: Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies, Limited in the United States and other countries. Data subject to change. Copyright 2008 Avago Technologies, Limited. All rights reserved. Obsoletes 5989-2768EN AV02-1231EN - May 15, 2008

PDF Datasheet Preview

MSA-0870 Cascadable Silicon Bipolar MMIC Amplifier

Data Sheet

The MSA-0870 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit MMIC housed in a hermetic, high reliability package. This MMIC is designed for use as a general purpose 50Ω gain block above GHz and can be used as a high gain transistor below this frequency. Typical applications include and moderate band IF and RF amplifiers in industrial and military applications.
• Usable Gain to GHz
• High Gain dB Typical at GHz dB Typical at GHz
• Low Noise Figure dB Typical at GHz
• Hermetic Gold-ceramic Microstrip Package

The MSA-series is fabricated using Avago’s 10 GHz fT, 25 GHz fMAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, and reliability. The use of an external bias resistor for temperature and current stability also bias flexibility.
70 mil Package

Typical Biasing Configuration

R bias

VCC > 10 V

C block IN
3 1 MSA

RFC Optional

C block Vd = V

MSA-0870 Absolute Maximum Ratings

Parameter

Absolute Maximum[1]

Device Current Power Dissipation[2,3]
80 mA 750 mW

RF Input Power
+13 dBm

Junction Temperature 200°C

Storage Temperature
to 200°C

Permanent damage may occur if any of these limits are exceeded.

TCASE = 25°C. Derate at mW/°C for TC > 88°C. The small spot size of this technique results in a higher, though more accurate determination
of than do alternate methods.

Thermal Resistance[2,4] = 150°C/W

Electrical Specifications[1], TA = 25°C

Parameters and Test Conditions Id = 36 mA, ZO = 50 Ω

Units Min. Typ. Max.

Power Gain |S21| 2
f = GHz
f = GHz 22.0 23.5 25.0
f = GHz

Input VSWR

Output VSWR
f = to GHz 2.0:1
f = to GHz
Ordering Information

Part Numbers MSA-0870

No. of Devices 100

Comments Bulk
70 mil Package Dimensions

GROUND

RF INPUT

RF OUTPUT AND BIAS
± ±
2 GROUND
unless otherwise specified

Dimensions are in

Tolerances
in .xxx = ±
mm .xx = ±

For product information and a complete list of distributors, please go to our web site:

Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies, Limited in the United States and other countries. Data subject to change. Copyright 2008 Avago Technologies, Limited. All rights reserved. Obsoletes 5989-2768EN AV02-1231EN - May 15, 2008

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived MSA-0870 Datasheet file may be downloaded here without warranties.

Datasheet ID: MSA-0870 520480