FDP5N50

FDP5N50 Datasheet

FDP5N50 / FDPF5N50T N-Channel MOSFET

Part	Datasheet
FDP5N50	FDP5N50 (pdf)

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FDP5N50 / FDPF5N50T N-Channel MOSFET FDP5N50 / FDPF5N50T N-Channel MOSFET 500V, 5A, • RDS on = VGS = 10V, ID = 2.5A • Low gate charge Typ. 11nC • Low Crss Typ. 5pF • Fast switching • 100% avalanche tested • Improved dv/dt capability • RoHS compliant May 2012 UniFETTM These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pluse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power suppliesand active power factor correction. TO-220 FDP Series TO-220F FDPF Series MOSFET Maximum Ratings TC = 25oC unless otherwise noted* Symbol VDSS VGSS IDM EAS IAR EAR dv/dt Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current -Continuous TC = 25oC -Continuous TC = 100oC - Pulsed Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation TC = 25oC - Derate above 25oC TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds *Drain current limited by maximum junction temperature Thermal Characteristics Note 1 Note 2 Note 1 Note 1 Note 3 FDP5N50 FDPF5N50 ±30 -55 to +150 Parameter Thermal Resistance, Junction to Case Thermal Resistance, Case to Sink Typ. Thermal Resistance, Junction to Ambient FDP5N50 FDPF5N50 Units V A mJ A mJ V/ns W W/oC Units oC/W 2012 Fairchild Semiconductor Corporation Package Marking and Ordering Information TC = 25oC unless otherwise noted Device Marking FDP5N50 Device FDP5N50 Package TO-220 Reel Size - Tape Width - FDPF5N50T FDPF5N50T TO-220F Quantity 50 Electrical Characteristics Parameter Test Conditions Min. Off Characteristics BVDSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate to Body Leakage Current ID = 250uA, VGS = 0V, TJ = 25oC ID = 250uA, Referenced to 25oC VDS = 500V, VGS = 0V VDS = 400V, TC = 125oC VGS = ±30V, VDS = 0V On Characteristics VGS th RDS on gFS Gate Threshold Voltage Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250uA VGS = 10V, ID = 2.5A VDS = 20V, ID = 2.5A Note 4 Dynamic Characteristics Ciss Coss Crss Qg tot Qgs Gate to Drain “Miller” Charge VDS = 25V, VGS = 0V f = 1MHz VDS = 400V, ID = 5A VGS = 10V Note 4, 5 Switching Characteristics td on tr td off tf Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time VDD = 250V, ID = 5A RG = 25Ω

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FDP5N50 / FDPF5N50T N-Channel MOSFET

FDP5N50 / FDPF5N50T

N-Channel MOSFET
500V, 5A,
• RDS on = VGS = 10V, ID = 2.5A
• Low gate charge Typ. 11nC
• Low Crss Typ. 5pF
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS compliant

May 2012

UniFETTM

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pluse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power suppliesand active power factor correction.

TO-220 FDP Series

TO-220F FDPF Series

MOSFET Maximum Ratings TC = 25oC unless otherwise noted*

Symbol VDSS VGSS

IDM EAS IAR EAR dv/dt

Parameter

Drain to Source Voltage

Gate to Source Voltage Drain Current Drain Current
-Continuous TC = 25oC -Continuous TC = 100oC
- Pulsed

Single Pulsed Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt Power Dissipation

TC = 25oC - Derate above 25oC

TJ, TSTG

Operating and Storage Temperature Range

Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature

Thermal Characteristics

Note 1 Note 2 Note 1 Note 1 Note 3

FDP5N50 FDPF5N50
±30
-55 to +150

Parameter Thermal Resistance, Junction to Case Thermal Resistance, Case to Sink Typ. Thermal Resistance, Junction to Ambient

FDP5N50

FDPF5N50

Units V A mJ A mJ

V/ns W

W/oC

Units
oC/W
2012 Fairchild Semiconductor Corporation
Package Marking and Ordering Information TC = 25oC unless otherwise noted

Device Marking FDP5N50

Device FDP5N50

Package TO-220

Reel Size -

Tape Width -

FDPF5N50T

FDPF5N50T

TO-220F

Quantity 50

Electrical Characteristics

Parameter

Test Conditions

Min.

Off Characteristics

BVDSS

Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient

IDSS

Zero Gate Voltage Drain Current

IGSS

Gate to Body Leakage Current

ID = 250uA, VGS = 0V, TJ = 25oC

ID = 250uA, Referenced to 25oC

VDS = 500V, VGS = 0V

VDS = 400V, TC = 125oC

VGS = ±30V, VDS = 0V

On Characteristics

VGS th RDS on gFS

Gate Threshold Voltage Static Drain to Source On Resistance Forward Transconductance

VGS = VDS, ID = 250uA VGS = 10V, ID = 2.5A VDS = 20V, ID = 2.5A

Note 4

Dynamic Characteristics

Ciss Coss Crss Qg tot Qgs

Gate to Drain “Miller” Charge

VDS = 25V, VGS = 0V f = 1MHz

VDS = 400V, ID = 5A VGS = 10V

Note 4, 5

Switching Characteristics
td on tr td off tf

Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time

VDD = 250V, ID = 5A RG = 25Ω

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Datasheet ID: FDP5N50 514253