AT-32033-TR1

AT-32033-TR1 Datasheet


Agilent AT-32011, AT-32033 Low Current, High Performance NPN Silicon Bipolar Transistor

Part Datasheet
AT-32033-TR1 AT-32033-TR1 AT-32033-TR1 (pdf)
Related Parts Information
AT-32011-TR1 AT-32011-TR1 AT-32011-TR1
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Agilent AT-32011, AT-32033 Low Current, High Performance NPN Silicon Bipolar Transistor

Data Sheet

Agilent’s AT-32011 and AT-32033 are high performance NPN bipolar transistors that have been optimized for maximum ft at low voltage operation, making them ideal for use in battery powered applications in wireless markets. The AT-32033 uses the 3 lead SOT-23, while the AT-32011 places the same die in the higher performance 4 lead SOT-143. Both packages are industry standard, and compatible with high volume surface mount assembly techniques.

The micron emitter-to-emitter pitch and reduced parasitic design of these transistors yields extremely high performance products that can perform a multiplicity of tasks. The 20 emitter finger interdigitated geometry yields an easy to match to and extremely fast transistor with moderate power, low noise resistance, and low operating currents.

Optimized performance at V makes these devices ideal for use in 900 MHz, GHz, and GHz battery operated systems as an LNA, gain stage, buffer, oscillator, or active mixer. Typical amplifier designs at 900 MHz yield dB noise figures with 12 dB or more associated gain at a V, 2 mA bias, with noise performance

Outline Drawing

EMITTER COLLECTOR

BASE EMITTER SOT-143 AT-32011

COLLECTOR

BASE EMITTER SOT-23 AT-32033
being relatively insensitive to input match. High gain capability at 1 V, 1 mA makes these devices a good fit for 900 MHz pager applications. Voltage breakdowns are high enough for use at 5 volts.

The AT-3 series bipolar transistors are fabricated using an optimized version of Agilent’s 10 GHz ft, 30 GHz fMAX Self-Aligned-Transistor SAT process. The die are nitride passivated for surface protection. Excellent device uniformity, performance and reliability are produced by the use of ionimplantation, self-alignment techniques, and gold metalization in the fabrication of these devices.
• High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation
• 900 MHz Performance AT-32011 1 dB NF, 14 dB GA AT-32033 1 dB NF, dB GA
• Characterized for End-OfLife Battery Use V
• SOT-23 and SOT-143 SMT Plastic Packages
• Tape-And-Reel Packaging Option Available
• Lead-free Option Available

AT-32011, AT-32033 Absolute Maximum Ratings

Parameter

Units

Absolute Maximum[1]

VEBO VCBO VCEO

IC PT Tj TSTG

Emitter-Base Voltage

Collector-Base Voltage

Collector-Emitter Voltage

Collector Current

Power Dissipation[2, 3]

Junction Temperature

Storage Temperature
11 32 200 150 -65 to 150

Thermal Resistance[2] = 550 °C/W

Notes Operation of this device above any one of these parameters may cause permanent damage. TMounting Surface = 25°C. Derate at mW/°C for TC > 40°C.

Electrical Specifications, TA = 25°C

AT-32011

AT-32033

Symbol Parameters and Test Conditions Units Min. Typ. Max. Min. Typ. Max.

NF Noise Figure

VCE = V, IC = 2 mA f = GHz

GA Associated Gain
Ordering Information

Part Numbers

No. of Devices Comments

AT-32011-BLK

AT-32033-BLK

Bulk

AT-32011-BLKG AT-32033-BLKG

Bulk

AT-32011-TR1

AT-32033-TR1
3000
7" Reel

AT-32011-TR1G AT-32033-TR1G
3000
7" Reel

AT-32011-TR2

AT-32033-TR2
10000
13" Reel

AT-32011-TR2G AT-32033-TR2G
10000
13" Reel

Note Order part number with a “G” suffix if lead-free option is desired.

Package Dimensions

SOT-23 Plastic Package

SOT-143 Plastic Package
e2 e1
e2 e1

Notes XXX-package marking Drawings are not to scale

DIMENSIONS mm

SYMBOL MIN. MAX.

Notes XXX-package marking Drawings are not to scale

DIMENSIONS mm

SYMBOL A A1 B B1 C D E1 e e1 e2 E L

MIN.

MAX. e

For product information and a complete list of distributors, please go to our web site.

For technical assistance call:

Americas/Canada +1 800 235-0312 or 916 788-6763

Europe +49 0 6441 92460

China 10800 650 0017 Hong Kong 65 6756 2394
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Datasheet ID: AT-32033-TR1 515841