AT-32011-TR1

AT-32011-TR1 Datasheet

Agilent AT-32011, AT-32033 Low Current, High Performance NPN Silicon Bipolar Transistor

Part	Datasheet
AT-32011-TR1	AT-32011-TR1 (pdf)

Related Parts	Information
AT-32033-TR1	AT-32033-TR1

PDF Datasheet Preview
Agilent AT-32011, AT-32033 Low Current, High Performance NPN Silicon Bipolar Transistor Data Sheet Agilent’s AT-32011 and AT-32033 are high performance NPN bipolar transistors that have been optimized for maximum ft at low voltage operation, making them ideal for use in battery powered applications in wireless markets. The AT-32033 uses the 3 lead SOT-23, while the AT-32011 places the same die in the higher performance 4 lead SOT-143. Both packages are industry standard, and compatible with high volume surface mount assembly techniques. The micron emitter-to-emitter pitch and reduced parasitic design of these transistors yields extremely high performance products that can perform a multiplicity of tasks. The 20 emitter finger interdigitated geometry yields an easy to match to and extremely fast transistor with moderate power, low noise resistance, and low operating currents. Optimized performance at V makes these devices ideal for use in 900 MHz, GHz, and GHz battery operated systems as an LNA, gain stage, buffer, oscillator, or active mixer. Typical amplifier designs at 900 MHz yield dB noise figures with 12 dB or more associated gain at a V, 2 mA bias, with noise performance Outline Drawing EMITTER COLLECTOR BASE EMITTER SOT-143 AT-32011 COLLECTOR BASE EMITTER SOT-23 AT-32033 being relatively insensitive to input match. High gain capability at 1 V, 1 mA makes these devices a good fit for 900 MHz pager applications. Voltage breakdowns are high enough for use at 5 volts. The AT-3 series bipolar transistors are fabricated using an optimized version of Agilent’s 10 GHz ft, 30 GHz fMAX Self-Aligned-Transistor SAT process. The die are nitride passivated for surface protection. Excellent device uniformity, performance and reliability are produced by the use of ionimplantation, self-alignment techniques, and gold metalization in the fabrication of these devices. • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation • 900 MHz Performance AT-32011 1 dB NF, 14 dB GA AT-32033 1 dB NF, dB GA • Characterized for End-OfLife Battery Use V • SOT-23 and SOT-143 SMT Plastic Packages • Tape-And-Reel Packaging Option Available • Lead-free Option Available AT-32011, AT-32033 Absolute Maximum Ratings Parameter Units Absolute Maximum[1] VEBO VCBO VCEO IC PT Tj TSTG Emitter-Base Voltage Collector-Base Voltage Collector-Emitter Voltage Collector Current Power Dissipation[2, 3] Junction Temperature Storage Temperature 11 32 200 150 -65 to 150 Thermal Resistance[2] = 550 °C/W Notes Operation of this device above any one of these parameters may cause permanent damage. TMounting Surface = 25°C. Derate at mW/°C for TC > 40°C. Electrical Specifications, TA = 25°C AT-32011 AT-32033 Symbol Parameters and Test Conditions Units Min. Typ. Max. Min. Typ. Max. NF Noise Figure VCE = V, IC = 2 mA f = GHz GA Associated Gain Ordering Information Part Numbers No. of Devices Comments AT-32011-BLK AT-32033-BLK Bulk AT-32011-BLKG AT-32033-BLKG Bulk AT-32011-TR1 AT-32033-TR1 3000 7" Reel AT-32011-TR1G AT-32033-TR1G 3000 7" Reel AT-32011-TR2 AT-32033-TR2 10000 13" Reel AT-32011-TR2G AT-32033-TR2G 10000 13" Reel Note Order part number with a “G” suffix if lead-free option is desired. Package Dimensions SOT-23 Plastic Package SOT-143 Plastic Package e2 e1 e2 e1 Notes XXX-package marking Drawings are not to scale DIMENSIONS mm SYMBOL MIN. MAX. Notes XXX-package marking Drawings are not to scale DIMENSIONS mm SYMBOL A A1 B B1 C D E1 e e1 e2 E L MIN. MAX. e For product information and a complete list of distributors, please go to our web site. For technical assistance call: Americas/Canada +1 800 235-0312 or 916 788-6763 Europe +49 0 6441 92460 China 10800 650 0017 Hong Kong 65 6756 2394

PDF Datasheet Preview

Agilent AT-32011, AT-32033 Low Current, High Performance NPN Silicon Bipolar Transistor

Data Sheet

Agilent’s AT-32011 and AT-32033 are high performance NPN bipolar transistors that have been optimized for maximum ft at low voltage operation, making them ideal for use in battery powered applications in wireless markets. The AT-32033 uses the 3 lead SOT-23, while the AT-32011 places the same die in the higher performance 4 lead SOT-143. Both packages are industry standard, and compatible with high volume surface mount assembly techniques.

The micron emitter-to-emitter pitch and reduced parasitic design of these transistors yields extremely high performance products that can perform a multiplicity of tasks. The 20 emitter finger interdigitated geometry yields an easy to match to and extremely fast transistor with moderate power, low noise resistance, and low operating currents.

Optimized performance at V makes these devices ideal for use in 900 MHz, GHz, and GHz battery operated systems as an LNA, gain stage, buffer, oscillator, or active mixer. Typical amplifier designs at 900 MHz yield dB noise figures with 12 dB or more associated gain at a V, 2 mA bias, with noise performance

Outline Drawing

EMITTER COLLECTOR

BASE EMITTER SOT-143 AT-32011

COLLECTOR

BASE EMITTER SOT-23 AT-32033
being relatively insensitive to input match. High gain capability at 1 V, 1 mA makes these devices a good fit for 900 MHz pager applications. Voltage breakdowns are high enough for use at 5 volts.

The AT-3 series bipolar transistors are fabricated using an optimized version of Agilent’s 10 GHz ft, 30 GHz fMAX Self-Aligned-Transistor SAT process. The die are nitride passivated for surface protection. Excellent device uniformity, performance and reliability are produced by the use of ionimplantation, self-alignment techniques, and gold metalization in the fabrication of these devices.
• High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation
• 900 MHz Performance AT-32011 1 dB NF, 14 dB GA AT-32033 1 dB NF, dB GA
• Characterized for End-OfLife Battery Use V
• SOT-23 and SOT-143 SMT Plastic Packages
• Tape-And-Reel Packaging Option Available
• Lead-free Option Available

AT-32011, AT-32033 Absolute Maximum Ratings

Parameter

Units

Absolute Maximum[1]

VEBO VCBO VCEO

IC PT Tj TSTG

Emitter-Base Voltage

Collector-Base Voltage

Collector-Emitter Voltage

Collector Current

Power Dissipation[2, 3]

Junction Temperature

Storage Temperature
11 32 200 150 -65 to 150

Thermal Resistance[2] = 550 °C/W

Notes Operation of this device above any one of these parameters may cause permanent damage. TMounting Surface = 25°C. Derate at mW/°C for TC > 40°C.

Electrical Specifications, TA = 25°C

AT-32011

AT-32033

Symbol Parameters and Test Conditions Units Min. Typ. Max. Min. Typ. Max.

NF Noise Figure

VCE = V, IC = 2 mA f = GHz

GA Associated Gain
Ordering Information

Part Numbers

No. of Devices Comments

AT-32011-BLK

AT-32033-BLK

Bulk

AT-32011-BLKG AT-32033-BLKG

Bulk

AT-32011-TR1

AT-32033-TR1
3000
7" Reel

AT-32011-TR1G AT-32033-TR1G
3000
7" Reel

AT-32011-TR2

AT-32033-TR2
10000
13" Reel

AT-32011-TR2G AT-32033-TR2G
10000
13" Reel

Note Order part number with a “G” suffix if lead-free option is desired.

Package Dimensions

SOT-23 Plastic Package

SOT-143 Plastic Package
e2 e1
e2 e1

Notes XXX-package marking Drawings are not to scale

DIMENSIONS mm

SYMBOL MIN. MAX.

Notes XXX-package marking Drawings are not to scale

DIMENSIONS mm

SYMBOL A A1 B B1 C D E1 e e1 e2 E L

MIN.

MAX. e

For product information and a complete list of distributors, please go to our web site.

For technical assistance call:

Americas/Canada +1 800 235-0312 or 916 788-6763

Europe +49 0 6441 92460

China 10800 650 0017 Hong Kong 65 6756 2394

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived AT-32011-TR1 Datasheet file may be downloaded here without warranties.

Datasheet ID: AT-32011-TR1 515841