FQP18N50V2

FQP18N50V2 Datasheet

FQP18N50V2/FQPF18N50V2 500V N-Channel MOSFET

Part	Datasheet
FQP18N50V2	FQP18N50V2 (pdf)

Related Parts	Information
FQPF18N50V2	FQPF18N50V2

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FQP18N50V2/FQPF18N50V2 500V N-Channel MOSFET FQP18N50V2/FQPF18N50V2 500V N-Channel MOSFET • 550V = 150°C • Typ. RDS on = = 10 V • Low gate charge typical 42 nC • Low Crss typical 11 pF • Fast switching • 100% avalanche tested • Improved dv/dt capability These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology. TO-220 FQP Series Absolute Maximum Ratings VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous TC = 25°C - Continuous TC = 100°C - Pulsed Note 1 Gate-Source Voltage Single Pulsed Avalanche Energy Note 2 Avalanche Current Note 1 Repetitive Avalanche Energy Note 1 Peak Diode Recovery dv/dt Note 3 Power Dissipation TC = 25°C - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient TO-220F FQPF Series ● ● FQP18N50V2 FQPF18N50V2 ± 30 330 -55 to +150 Units V A V mJ A mJ V/ns W/°C °C °C FQP18N50V2 Package Marking and Ordering Information Device Marking PV218N50 PFV218N50 Device FQP18N50V2 FQPF18N50V2 Package TO-220 TO-220F Reel Size - Tape Width - Quantity 50 Electrical Characteristics TC = 25°C unless otherwise noted Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVDSS IDSS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current IGSSF IGSSR On Characteristics VGS th RDS on Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Dynamic Characteristics Ciss Coss Crss Coss Coss eff. Effective Output Capacitance Switching Characteristics td on tr td off tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 500 V, VGS = 0 V VDS = 400 V, TC = 125°C VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V VDS = VGS, ID = 250 µA VGS = 10 V, ID = 9 A VDS = 40 V, ID = 9 A Note 4

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FQP18N50V2/FQPF18N50V2 500V N-Channel MOSFET

FQP18N50V2/FQPF18N50V2
500V N-Channel MOSFET
• 550V = 150°C
• Typ. RDS on = = 10 V
• Low gate charge typical 42 nC
• Low Crss typical 11 pF
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology.

TO-220

FQP Series

Absolute Maximum Ratings

VDSS ID

IDM VGSS EAS IAR EAR dv/dt PD

TJ, TSTG TL

Parameter

Drain-Source Voltage

Drain Current Drain Current
- Continuous TC = 25°C - Continuous TC = 100°C - Pulsed

Note 1

Gate-Source Voltage

Single Pulsed Avalanche Energy

Note 2

Avalanche Current

Note 1

Repetitive Avalanche Energy

Note 1

Peak Diode Recovery dv/dt

Note 3

Power Dissipation TC = 25°C - Derate above 25°C

Operating and Storage Temperature Range

Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds

Thermal Characteristics

Parameter

Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient

TO-220F

FQPF Series
● ●

FQP18N50V2 FQPF18N50V2
± 30 330
-55 to +150

Units

V A V mJ A mJ V/ns W/°C °C °C

FQP18N50V2
Package Marking and Ordering Information

Device Marking PV218N50 PFV218N50

Device FQP18N50V2 FQPF18N50V2

Package TO-220 TO-220F

Reel Size -

Tape Width -

Quantity 50

Electrical Characteristics TC = 25°C unless otherwise noted

Parameter

Test Conditions

Min.

Typ.

Max.

Units

Off Characteristics

BVDSS IDSS

Drain-Source Breakdown Voltage

Breakdown Voltage Temperature Coefficient

Zero Gate Voltage Drain Current

IGSSF IGSSR

On Characteristics

VGS th RDS on

Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transconductance

Dynamic Characteristics

Ciss Coss Crss Coss

Coss eff.

Effective Output Capacitance

Switching Characteristics
td on tr td off tf Qg Qgs Qgd

Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge

VGS = 0 V, ID = 250 µA

ID = 250 µA, Referenced to 25°C

VDS = 500 V, VGS = 0 V

VDS = 400 V, TC = 125°C

VGS = 30 V, VDS = 0 V

VGS = -30 V, VDS = 0 V

VDS = VGS, ID = 250 µA VGS = 10 V, ID = 9 A

VDS = 40 V, ID = 9 A

Note 4

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Datasheet ID: FQP18N50V2 515278