FDMS2506SDC
FDMS2506SDC Datasheet
FDMS2506SDC N-Channel Dual CoolTM SyncFETTM
| Part | Datasheet |
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FDMS2506SDC |
FDMS2506SDC (pdf) |
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| FDMS2506SDC N-Channel Dual CoolTM SyncFETTM FDMS2506SDC N-Channel Dual CoolTM SyncFETTM 25 V, 49 A, mΩ July 2013 - Dual CoolTM Top Side Cooling PQFN package - Max rDS on = mΩ at VGS = 10 V, ID = 30 A - Max rDS on = mΩ at VGS = V, ID = 26 A - High performance technology for extremely low rDS on - SyncFET Schottky Body Diode - RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced process. Advancements in both silicon and Dual CoolTM package technologies have been combined to offer the lowest rDS on while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance. This device has the added benefit of an efficient monolithic Schottky body diode. - Synchronous Rectifier for DC/DC Converters - Telecom Secondary Side Rectification - High End Server/Workstation Vcore Low Side Pin 1 D5 D6 4G 3S Power 56 Bottom MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS EAS dv/dt PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous Package limited -Continuous Silicon limited -Continuous -Pulsed TC = 25 °C TC = 25 °C TA = 25 °C Single Pulse Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C Operating and Storage Junction Temperature Range Thermal Characteristics D7 D8 Note 4 Note 1a Note 3 Note 5 Note 1a 2S 1S Ratings 25 ±20 49 202 39 200 220 89 -55 to +150 Units V mJ V/ns W °C Package Marking and Ordering Information Top Source Bottom Drain Note 1a Note 1b Note 1i Note 1j Note 1k °C/W Device Marking Device 2506S FDMS2506SDC Package Dual CoolTM Power 56 Reel Size 13’’ Tape Width 12 mm Quantity 3000 units FDMS2506SDC N-Channel Dual CoolTM SyncFETTM Electrical Characteristics TJ = 25 °C unless otherwise noted Parameter Test Conditions Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 1 mA, VGS = 0 V Breakdown Voltage Temperature Coefficient ID = 10 mA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 20 V, VGS = 0 V IGSS Gate to Source Leakage Current, Forward VGS = 20 V, VDS = 0 V On Characteristics VGS th Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient rDS on Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 1 mA ID = 10 mA, referenced to 25 °C |
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