AOD604

AOD604 Datasheet


AOD604 Complementary Enhancement Mode Field Effect Transistor

Part Datasheet
AOD604 AOD604 AOD604 (pdf)
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AOD604 Complementary Enhancement Mode Field Effect Transistor

The AOD604 uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications.
-RoHS Compliant -Halogen Free*
n-channel VDS V = 40V ID = 8A VGS=10V RDS ON < 33 VGS=10V < 47 VGS=4.5V
p-channel -40V -8A VGS = -10V RDS ON < 50 VGS = -10V < 70 VGS = -4.5V
100% UIS Tested!

Top View D

TO-252-5L D-PAK Bottom View

S2 G2 S1 G1D1/D2

G2 S2
n-channel

G1 S1
p-channel

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter

Symbol Max n-channel

Drain-Source Voltage

Gate-Source Voltage
±20

Continuous Drain TC=25°C

Current G

TC=100°C

Pulsed Drain Current C

Avalanche Current C

Repetitive avalanche energy L=0.1mH C

TC=25°C Power Dissipation B TC=100°C
20 10

TA=25°C Power Dissipation A TA=70°C

PDSM

Junction and Storage Temperature Range TJ, TSTG Thermal Characteristics n-channel and p-channel
-55 to 175

Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A

Maximum Junction-to-Case B Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A

Maximum Junction-to-Case B
t 10s Steady-State Steady-State
t 10s Steady-State Steady-State

Device n-ch n-ch n-ch
p-ch p-ch p-ch

Max p-channel -40 ±20 -8 -30 -8 30 15
-55 to 175

Typ Max
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Datasheet ID: AOD604 516235