AOD604
AOD604 Datasheet
AOD604 Complementary Enhancement Mode Field Effect Transistor
| Part | Datasheet |
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AOD604 |
AOD604 (pdf) |
| PDF Datasheet Preview |
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| AOD604 Complementary Enhancement Mode Field Effect Transistor The AOD604 uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications. -RoHS Compliant -Halogen Free* n-channel VDS V = 40V ID = 8A VGS=10V RDS ON < 33 VGS=10V < 47 VGS=4.5V p-channel -40V -8A VGS = -10V RDS ON < 50 VGS = -10V < 70 VGS = -4.5V 100% UIS Tested! Top View D TO-252-5L D-PAK Bottom View S2 G2 S1 G1D1/D2 G2 S2 n-channel G1 S1 p-channel Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Max n-channel Drain-Source Voltage Gate-Source Voltage ±20 Continuous Drain TC=25°C Current G TC=100°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy L=0.1mH C TC=25°C Power Dissipation B TC=100°C 20 10 TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Thermal Characteristics n-channel and p-channel -55 to 175 Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Case B Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Case B t 10s Steady-State Steady-State t 10s Steady-State Steady-State Device n-ch n-ch n-ch p-ch p-ch p-ch Max p-channel -40 ±20 -8 -30 -8 30 15 -55 to 175 Typ Max |
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