2N5830_D26Z
2N5830_D26Z Datasheet
2N5830
| Part | Datasheet |
|---|---|
2N5830_D26Z |
2N5830_D26Z (pdf) |
| Related Parts | Information |
|---|---|
|
2N5830 |
2N5830 |
| PDF Datasheet Preview |
|---|
| 2N5830 2N5830 Discrete POWER & Signal Technologies TO-92 NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display driving. Sourced from Process See 2N5551 for characteristics. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Parameter Value VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage IC TJ, Tstg Collector Current - Continuous Operating and Storage Junction Temperature Range 200 -55 to +150 *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES 1 These ratings are based on a maximum junction temperature of 150 degrees C. 2 These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient 2N5830 625 200 Units V mA °C Units mW/°C °C/W °C/W 1997 Fairchild Semiconductor Corporation 2N5830 NPN General Purpose Amplifier continued Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS |
| More datasheets: B57540G0502F000 | B57540G0503F000 | B57540G0104F000 | B57540G0303F000 | 10116129-0001LF | 74F534SJX | 74F534SJ | 74F534PC | 74F534SC | 74F534SCX |
Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived 2N5830_D26Z Datasheet file may be downloaded here without warranties.