ADG774BRQ-500RL7

ADG774BRQ-500RL7 Datasheet


ADG774

Part Datasheet
ADG774BRQ-500RL7 ADG774BRQ-500RL7 ADG774BRQ-500RL7 (pdf)
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FEATURES Low Insertion Loss and On Resistance Typical On Resistance Flatness Typical Automotive Temperature Range
to dB Bandwidth = 240 MHz Single 3 V/5 V Supply Operation Rail-to-Rail Operation Very Low Distortion Low Quiescent Supply Current 1 nA Typical Fast Switching Times
tON 7 ns tOFF 4 ns TTL/CMOS Compatible

APPLICATIONS USB Signal Switching Circuits Cell Phones PDAs Battery-Powered Systems Communications Systems Data Acquisition Systems Token Ring 4 Mbps/16 Mbps Audio and Video Switching Relay Replacement

CMOS 3 V/5 V, Wide Bandwidth Quad 2:1 Mux

ADG774

FUNCTIONAL BLOCK DIAGRAM

ADG774

S1A D1

S2A D2

S3A D3

S4A D4
1 OF 2 DECODER

GENERAL DESCRIPTION The ADG774 is a monolithic CMOS device comprising four 2:1 multiplexer/demultiplexers with high impedance outputs. The CMOS process provides low power dissipation yet gives high switching speed and low on resistance. The on resistance variation is typically less than with an input signal ranging from 0 V to 5 V.

The bandwidth of the ADG774 is greater than 200 MHz this, coupled with low distortion typically makes the part suitable for switching USB data signals and fast Ethernet signals.

The on resistance profile is very flat over the full analog input range ensuring excellent linearity and low distortion when switching audio signals. Fast switching speed, coupled with high signal bandwidth, also makes the parts suitable for video signal switching. CMOS construction ensures ultralow power dissipation, making the parts ideally suited for portable and batterypowered instruments.

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The ADG774 operates from a single V/5 V supply and is TTL logic compatible. The control logic for each switch is shown in the Truth Table.

These switches conduct equally well in both directions when ON, and have an input signal range that extends to the supplies. In the OFF condition, signal levels up to the supplies are blocked. The ADG774 switches exhibit break-before-make switching action.

PRODUCT HIGHLIGHTS Wide dB Bandwidth, 240 MHz.

Ultralow Power Dissipation.

Extended Signal Range. The ADG774 is fabricated on a CMOS process giving an increased signal range that fully extends to the supply rails.

Low Leakage Over Temperature.

Break-Before-Make Switching. This prevents channel shorting when the switches are configured as a multiplexer.

Crosstalk Typically dB 30 MHz.

Off Isolation Typically dB 10 MHz.

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Tel 781/329-4700

Fax 781/326-8703 2004 Analog Devices, Inc. All rights reserved.

SINGLE SUPPLY VDD = 5 V 10%, GND = 0 V. All specifications TMIN to TMAX unless otherwise noted.

Parameter

B Version1 to

Unit

Test Conditions/Comments

ANALOG SWITCH

Analog Signal Range

On Resistance RON

On Resistance Match between

Channels

On Resistance Flatness RFLAT ON
0 V to VDD V typ
ORDERING GUIDE

Package Descriptions

Standard Small Outline Package SOIC Standard Small Outline Package SOIC Standard Small Outline Package SOIC Standard Small Outline Package SOIC Standard Small Outline Package SOIC Standard Small Outline Package SOIC Shrink Small Outline Package QSOP Shrink Small Outline Package QSOP Shrink Small Outline Package QSOP Shrink Small Outline Package QSOP Shrink Small Outline Package QSOP Shrink Small Outline Package QSOP

Package Options

R-16 R-16 R-16 R-16 R-16 R-16 RQ-16 RQ-16 RQ-16 RQ-16 RQ-16 RQ-16

CAUTION ESD electrostatic discharge sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the ADG774 features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality.

PIN CONFIGURATION SOIC/QSOP

IN 1 S1A 2
16 VDD 15 EN

S1B 3
14 S4A

D1 4 ADG774 13 S4B

TOP VIEW S2A 5 Not to Scale 12 D4

S2B 6
11 S3A
10 S3B

GND 8

ADG774

VDD GND S D IN EN RON RFLAT ON

IS OFF ID OFF ID, IS ON VD VS CS OFF CD OFF CD, CS ON tON tOFF tD

Crosstalk

Off Isolation Bandwidth Distortion

TERMINOLOGY

Most Positive Power Supply Potential. Ground 0 V Reference. Source Terminal. May be an input or output. Drain Terminal. May be an input or output. Logic Control Input. Logic Control Input. Ohmic Resistance between D and S. On Resistance Match between any Two Channels, i.e., RON max RON min. Flatness is defined as the difference between the maximum and minimum value of on resistance as measured over the specified analog signal range. Source Leakage Current with the Switch OFF. Drain Leakage Current with the Switch OFF. Channel Leakage Current with the Switch ON. Analog Voltage on Terminals D, S. OFF Switch Source Capacitance. OFF Switch Drain Capacitance. ON Switch Capacitance. Delay between Applying the Digital Control Input and the Output Switching on. See Test Circuit Delay between Applying the Digital Control Input and the Output Switching Off. OFF Time or ON Time Measured between the 90% Points of Both Switches, When Switching from One Address State to Another. See Test Circuit A Measure of Unwanted Signal that is Coupled through from One Channel to Another as a Result of Parasitic Capacitance. A Measure of Unwanted Signal Coupling through an OFF Switch. Frequency Response of the Switch in the ON State Measured at 3 dB Down. RFLAT ON /RL

Performance Characteristics

VDD = 2.7V

VDD = 3.0V

VDD = 4.5V

VDD = 5.0V

VS OR VD DRAIN OR SOURCE VOLTAGE V

TPC On Resistance as a Function of VD VS for Various Single Supplies

ON RESPONSE dB
0 VDD = 5V
100k

FREQUENCY Hz
100M

TPC On Response vs. Frequency

VDD = 5V

VS OR VO DRAIN OR SOURCE VOLTAGE V

TPC On Resistance as a Function of VD VS for Different Temperatures with 5 V Single Supplies

ATTENUATION dB
Changes to ORDERING GUIDE 4
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Datasheet ID: ADG774BRQ-500RL7 517820