ZVP0120A
Part | Datasheet |
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ZVP0120AS (pdf) |
Related Parts | Information |
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ZVP0120ASTOB |
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ZVP0120ASTZ |
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ZVP0120ASTOA |
PDF Datasheet Preview |
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P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 MARCH 94 FEATURES * 200 Volt VDS * ZVP0120A ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at Tamb=25°C Pulsed Drain Current Gate Source Voltage Power Dissipation at Tamb=25°C Operating and Storage Temperature Range VDS ID IDM VGS Ptot Tj:Tstg E-Line TO92 Compatible VALUE -200 -110 -1 ± 20 700 -55 to +150 UNIT V mA A V mW °C ELECTRICAL CHARACTERISTICS at Tamb = 25°C unless otherwise stated . PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS. Drain-Source Breakdown Voltage BVDSS -200 ID=-1mA, VGS=0V Gate-Source Threshold Voltage VGS th V ID=-1mA, VDS= VGS Gate-Body Leakage Zero Gate Voltage Drain Current IGSS IDSS 20 nA -10 µA -100 µA VGS=± 20V, VDS=0V VDS=-200 V, VGS=0 VDS=-160 V, VGS=0V, T=125°C 2 On-State Drain Current 1 Static Drain-Source On-State Resistance 1 ID on RDS on -250 32 mA VDS=-25 V, VGS=-10V VGS=-10V,ID=-125mA Forward Transconductance mS VDS=-25V,ID=-125mA Input Capacitance 2 Ciss Common Source Output Coss Capacitance 2 100 pF 25 pF VDS=-25 V, VGS=0V, f=1MHz |
More datasheets: 2N5830 | FJY4014R | B48611A5903Q012 | AOD604 | SEN0017 | ADG774BRQ-500RL7 | A000074 | ZVP0120ASTOB | ZVP0120ASTZ | ZVP0120ASTOA |
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