ZVP0120AS

ZVP0120AS Datasheet


ZVP0120A

Part Datasheet
ZVP0120AS ZVP0120AS ZVP0120AS (pdf)
Related Parts Information
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ZVP0120ASTOA ZVP0120ASTOA ZVP0120ASTOA
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P-CHANNEL ENHANCEMENT

MODE VERTICAL DMOS FET

ISSUE 2 – MARCH 94 FEATURES * 200 Volt VDS *

ZVP0120A

ABSOLUTE MAXIMUM RATINGS.

PARAMETER Drain-Source Voltage Continuous Drain Current at Tamb=25°C Pulsed Drain Current Gate Source Voltage Power Dissipation at Tamb=25°C Operating and Storage Temperature Range

VDS ID IDM VGS Ptot Tj:Tstg

E-Line TO92 Compatible

VALUE -200 -110 -1 ± 20 700
-55 to +150

UNIT V mA A V
mW °C

ELECTRICAL CHARACTERISTICS at Tamb = 25°C unless otherwise stated .

PARAMETER

SYMBOL MIN. MAX. UNIT CONDITIONS.

Drain-Source Breakdown Voltage

BVDSS -200

ID=-1mA, VGS=0V

Gate-Source Threshold Voltage

VGS th V

ID=-1mA, VDS= VGS

Gate-Body Leakage

Zero Gate Voltage Drain Current

IGSS IDSS
20 nA -10 µA -100 µA

VGS=± 20V, VDS=0V VDS=-200 V, VGS=0 VDS=-160 V, VGS=0V, T=125°C 2

On-State Drain Current 1

Static Drain-Source On-State Resistance 1

ID on RDS on
-250 32
mA VDS=-25 V, VGS=-10V

VGS=-10V,ID=-125mA

Forward Transconductance
mS VDS=-25V,ID=-125mA

Input Capacitance 2

Ciss

Common Source Output

Coss

Capacitance 2
100 pF 25 pF

VDS=-25 V, VGS=0V, f=1MHz
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Datasheet ID: ZVP0120AS 510251