APT55M65JFLL

APT55M65JFLL Datasheet

APT55M65JFLL

Part	Datasheet
APT55M65JFLL	APT55M65JFLL (pdf)

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APT55M65JFLL 550V 63A SOT-227 S POWER MOS 7 R FREDFET Power MOS is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed and Qg. Power MOS with Power MOS by significantly lowering combines lower conduction and switching RDS ON losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. "UL Recognized" • Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg • Increased Power Dissipation • Easier To Drive • Popular SOT-227 Package • FAST RECOVERY BODY DIODE MAXIMUM RATINGS Symbol Parameter All Ratings TC = 25°C unless otherwise specified. APT55M65JFLL UNIT VDSS ID IDM VGS VGSM Drain-Source Voltage Continuous Drain Current TC = 25°C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation TC = 25°C Linear Derating Factor Volts 63 Amps ±30 Volts ±40 Watts W/°C TJ,TSTG TL IAR EAR EAS Operating and Storage Junction Temperature Range Lead Temperature from Case for 10 Sec. Avalanche Current 1 Repetitive and Non-Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy 4 -55 to 150 300 63 50 3200 °C Amps STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions BVDSS RDS on IDSS IGSS VGS th Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA Drain-Source On-State Resistance 2 VGS = 10V, ID = 31.5A Zero Gate Voltage Drain Current VDS = 550V, VGS = 0V Zero Gate Voltage Drain Current VDS = 440V, VGS = 0V, TC = 125°C Gate-Source Leakage Current VGS = ±30V, VDS = 0V Gate Threshold Voltage VDS = VGS, ID = 5mA MIN TYP MAX UNIT Volts Ohms

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APT55M65JFLL
550V 63A

SOT-227 S

POWER MOS 7 R FREDFET

Power MOS is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed and Qg. Power MOS
with Power MOS by significantly lowering combines lower conduction and switching

RDS ON losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
"UL Recognized"
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
• Increased Power Dissipation
• Easier To Drive
• Popular SOT-227 Package
• FAST RECOVERY BODY DIODE

MAXIMUM RATINGS Symbol Parameter

All Ratings TC = 25°C unless otherwise specified.

APT55M65JFLL

UNIT

VDSS ID IDM

VGS VGSM

Drain-Source Voltage Continuous Drain Current TC = 25°C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation TC = 25°C Linear Derating Factor

Volts
63 Amps
±30

Volts
±40

Watts

W/°C

TJ,TSTG TL IAR EAR EAS

Operating and Storage Junction Temperature Range

Lead Temperature from Case for 10 Sec. Avalanche Current 1 Repetitive and Non-Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy 4
-55 to 150 300 63 50 3200
°C Amps

STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions

BVDSS RDS on

IDSS

IGSS VGS th

Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA Drain-Source On-State Resistance 2 VGS = 10V, ID = 31.5A Zero Gate Voltage Drain Current VDS = 550V, VGS = 0V Zero Gate Voltage Drain Current VDS = 440V, VGS = 0V, TC = 125°C Gate-Source Leakage Current VGS = ±30V, VDS = 0V Gate Threshold Voltage VDS = VGS, ID = 5mA

MIN TYP MAX UNIT

Volts

Ohms

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Datasheet ID: APT55M65JFLL 648684