RMPA0967

RMPA0967 Datasheet

RMPA0967 Cellular CDMA, CDMA2000-1X and WCDMA Power Edge Power Module

Part	Datasheet
RMPA0967	RMPA0967 (pdf)

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RMPA0967 Cellular CDMA, CDMA2000-1X and WCDMA Power Edge Power Module March 2006 RMPA0967 Cellular CDMA, CDMA2000-1X and WCDMA Power Edge Power Module • Single positive-supply operation with low power and shutdown modes • 39% CDMA/WCDMA at +28 dBm average output power • 52% AMPS mode at +31 dBm output power • Lead-free RoHS compliant 3 x 3 x 1mm leadless package • Internally matched to 50 Ohms and DC blocked RF input/output • Meets CDMA2000-1XRTT/WCDMA performance requirements • Meets HSDPA performance requirements • Alternative pin-out to Fairchild RMPA0965 The RMPA0967 power module PAM is designed for cellular band AMPS, CDMA, CDMA2000-1X, WCDMA and HSDPA applications. The 2 stage PAM is internally matched to 50 Ohms to minimize the use of external components and features a low-power mode to reduce standby current and DC power consumption during peak phone usage. High poweradded and excellent linearity are achieved using Fairchild RF’s InGaP Heterojunction Bipolar Transistor HBT process. Device Functional Block Diagram Top View Vref 1 Vmode 2 RF IN 3 Vcc1 4 MMIC DC Bias Control Input Match 8 GND Output Match 7 RF OUT 6 GND 5 Vcc2 paddle ground on package bottom RMPA0967 Cellular CDMA, CDMA2000-1X and WCDMA Power Edge Power Module Absolute Ratings1 Parameter Value Units Supply Voltages Reference Voltage Power Control Voltage RF Input Power Storage Temperature Vcc1, Vcc2 Vref Vmode Pin Tstg +10 -55 to +150 V dBm °C Note No permanent damage with one parameter set at extreme limit. Other parameters set to typical values. Electrical Characteristics1 Parameter Symbol Min Typ Max Units Comments Operating Frequency C CDMA Operation Small-Signal Gain Power Gain Linear Output Power PAEd digital +28dBm PAEd digital +16dBm PAEd digital +16dBm High Power Total Current Low Power Total Current Adjacent Channel Power Ratio ±885KHz Offset ±1.98MHz Offset AMPS Operation Gain Power-Added analog General Characteristics Input Impedance Noise Figure Receive Band Noise Power Harmonic Suppression3 Spurious Outputs2, 3 Ruggedness w/ Load Mismatch3 Case Operating Temperature DC Characteristics Quiescent Current Reference Current Shutdown Leakage Current SSg Gp Po PAEd

PDF Datasheet Preview

RMPA0967 Cellular CDMA, CDMA2000-1X and WCDMA Power Edge Power Module

March 2006

RMPA0967 Cellular CDMA, CDMA2000-1X and WCDMA Power Edge Power Module
• Single positive-supply operation with low power and shutdown modes
• 39% CDMA/WCDMA at +28 dBm average output power
• 52% AMPS mode at +31 dBm output power
• Lead-free RoHS compliant 3 x 3 x 1mm leadless package
• Internally matched to 50 Ohms and DC blocked RF
input/output
• Meets CDMA2000-1XRTT/WCDMA performance
requirements
• Meets HSDPA performance requirements
• Alternative pin-out to Fairchild RMPA0965

The RMPA0967 power module PAM is designed for cellular band AMPS, CDMA, CDMA2000-1X, WCDMA and HSDPA applications. The 2 stage PAM is internally matched to 50 Ohms to minimize the use of external components and features a low-power mode to reduce standby current and DC power consumption during peak phone usage. High poweradded and excellent linearity are achieved using Fairchild RF’s InGaP Heterojunction Bipolar Transistor HBT process.

Device

Functional Block Diagram

Top View

Vref 1 Vmode 2

RF IN 3 Vcc1 4

MMIC DC Bias Control

Input Match
8 GND

Output Match
7 RF OUT 6 GND
5 Vcc2
paddle ground on package bottom

RMPA0967 Cellular CDMA, CDMA2000-1X and WCDMA Power Edge Power Module

Absolute Ratings1

Parameter

Value

Units

Supply Voltages Reference Voltage Power Control Voltage RF Input Power Storage Temperature

Vcc1, Vcc2 Vref

Vmode Pin Tstg
+10 -55 to +150

V dBm °C

Note No permanent damage with one parameter set at extreme limit. Other parameters set to typical values.

Electrical Characteristics1

Parameter

Symbol Min Typ Max Units Comments

Operating Frequency C CDMA Operation Small-Signal Gain Power Gain

Linear Output Power

PAEd digital +28dBm PAEd digital +16dBm PAEd digital +16dBm High Power Total Current Low Power Total Current Adjacent Channel Power Ratio ±885KHz Offset
±1.98MHz Offset

AMPS Operation Gain Power-Added analog General Characteristics Input Impedance Noise Figure Receive Band Noise Power Harmonic Suppression3 Spurious Outputs2, 3 Ruggedness w/ Load Mismatch3 Case Operating Temperature DC Characteristics Quiescent Current Reference Current Shutdown Leakage Current

SSg Gp Po PAEd

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Datasheet ID: RMPA0967 634680