IHW30N100R
IHW30N100R Datasheet
IHW30N100R q
| Part | Datasheet |
|---|---|
IHW30N100R |
IHW30N100R (pdf) |
| PDF Datasheet Preview |
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| Soft Switching Series IHW30N100R q Features • 1.5V Forward voltage of monolithic body Diode • Full Current Rating of monolithic body Diode • Specified for TJmax = 175°C • Trench and Fieldstop technology for 1000 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - easy parallel switching capability due to positive temperature coefficient in VCE sat • Low EMI • Qualified according to JEDEC1 for target applications • Pb-free lead plating RoHS compliant Applications • Microwave Oven • Soft Switching Applications PG-TO-247-3 Type VCE sat ,Tj=25°C Tj,max Marking IHW30N100R 1000V 30A 1.5V 175°C H30R100 Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE 1000V, Tj 175°C Diode forward current TC = 25°C TC = 100°C Diode pulsed current, tp limited by Tjmax Gate-emitter voltage Transient Gate-emitter voltage tp < 5 ms Power dissipation, TC = 25°C Operating junction temperature Storage temperature Soldering temperature, 1.6mm in. from case for 10s VCE IC ICpuls IF IFpuls VGE Ptot Tj Tstg - Package PG-TO-247-3 Value 1000 60 30 90 60 30 90 ±20 ±25 412 260 Unit V A V W °C °C 1 J-STD-020 and JESD-022 Power Semiconductors Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction case Diode thermal resistance, junction case Thermal resistance, junction ambient Soft Switching Series IHW30N100R q Symbol RthJC RthJCD RthJA Conditions Max. Value Unit Electrical Characteristic, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation voltage |
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