KSA1243OTU

KSA1243OTU Datasheet

KSA1243

Part	Datasheet
KSA1243OTU	KSA1243OTU (pdf)

Related Parts	Information
KSA1243YTU	KSA1243YTU

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KSA1243 KSA1243 Power Amplifier Applications • Complement to KSC3073 I-PACK Base Collector Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Parameter VCBO VCEO VEBO IB IC PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current Collector Current Collector Dissipation Ta=25°C Collector Dissipation TC=25°C Junction Temperature Storage Temperature Ratings - 30 - 30 -5 - -3 1 10 150 - 55 ~ 150 Units V A W °C °C Electrical Characteristics TC=25°C unless otherwise noted Parameter Test Condition BVCEO BVEBO ICBO IEBO hFE1 hFE2 VCE sat VBE on fT Cob Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter ON Voltage Current Gain Bandwidth Product Output Capacitance IC = - 10mA, IB = 0 IE = - 1mA, IC = 0 VCB = - 20V, IE = 0 VEB = - 5V, IC = 0 VCE = - 2V, IC = - 0.5A VCE = - 2V, IC = - 2.5A IC = - 2A, IB = - 0.2A VCE = - 2V, IC = - 0.5A VCE = - 2V, IC = - 0.5A VCB = - 10V, f = 1MHz Min. - 30 -5 70 25 Typ. - - 100 Max. -1 -1 240 Units V µA µA V MHz pF hFE Classification Classification hFE1 O 70 ~ 140 Y 120 ~ 240 2000 Fairchild Semiconductor International Typical Characteristics IC[A], COLLECTOR CURRENT IB = -40mA IB = -35mA IB = -30mA IB = -25mA IB = -20mA IB = -15mA IB = -10mA IB = -5mA

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KSA1243

KSA1243

Power Amplifier Applications
• Complement to KSC3073

I-PACK

Base Collector Emitter

PNP Epitaxial Silicon Transistor

Absolute Maximum Ratings TC=25°C unless otherwise noted

Parameter

VCBO VCEO VEBO IB IC PC TJ TSTG

Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current Collector Current Collector Dissipation Ta=25°C Collector Dissipation TC=25°C Junction Temperature Storage Temperature

Ratings - 30 - 30 -5 - -3 1 10 150
- 55 ~ 150

Units V A W °C °C

Electrical Characteristics TC=25°C unless otherwise noted

Parameter

Test Condition

BVCEO BVEBO ICBO IEBO hFE1 hFE2 VCE sat VBE on fT Cob

Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain

Collector-Emitter Saturation Voltage Base-Emitter ON Voltage Current Gain Bandwidth Product Output Capacitance

IC = - 10mA, IB = 0 IE = - 1mA, IC = 0 VCB = - 20V, IE = 0 VEB = - 5V, IC = 0 VCE = - 2V, IC = - 0.5A VCE = - 2V, IC = - 2.5A IC = - 2A, IB = - 0.2A VCE = - 2V, IC = - 0.5A VCE = - 2V, IC = - 0.5A VCB = - 10V, f = 1MHz

Min. - 30 -5
70 25

Typ.
- - 100

Max.
-1 -1 240

Units V µA µA

V MHz pF
hFE Classification

Classification hFE1

O 70 ~ 140

Y 120 ~ 240
2000 Fairchild Semiconductor International

Typical Characteristics

IC[A], COLLECTOR CURRENT

IB = -40mA IB = -35mA IB = -30mA IB = -25mA

IB = -20mA

IB = -15mA

IB = -10mA

IB = -5mA

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Datasheet ID: KSA1243OTU 634151