IXRP15N120
IXRP15N120 Datasheet
IXRP 15N120
| Part | Datasheet |
|---|---|
IXRP15N120 |
IXRP15N120 (pdf) |
| PDF Datasheet Preview |
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| Advanced Technical Information IXRP 15N120 Blocking capability VCES = ±1200 V IC25 = 25 A V = CE sat typ. V TO-220AB TAB 1 = Gate 2, TAB = Collector 3 = Emitter IGBT VCES VGES IC25 IC90 ICM VCEK SCSOA Ptot Conditions TVJ = 25°C to 150°C Continuous TC = 25°C TC = 90°C VGE = 0/15 V RG = 47 TVJ = 125°C RBSOA Clamped inductive load L = 100 µH 600 V TC = 25°C Maximum Ratings ± 1200 ± 20 25 A 15 A 30 A 600 V 10 µs 300 W VCE sat VGE th ICES IGES QGon Conditions Characteristic Values TVJ = 25°C, unless otherwise specified min. typ. max. IC = 10 A VGE = 15 V IC = 1 mA VGE = VCE TVJ = 25°C TVJ = 125°C VCE = VCES VGE = 0 V TVJ = 25°C TVJ = 125°C VCE = 0 V VGE = ± 20 V VCE = 120 V VGE = 15 V IC = 10 A 50 µA 500 nA • IGBT with NPT non punch through structure integrated, no external series diode required saturation voltage • Epoxy of package meets UL 94V-0 - current source inverters - matrix converters - bi-directional switches - resonant converters - induction heating - auxiliary switches for soft switching in the main current path |
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