APT5F100K

APT5F100K Datasheet

APT5F100K

Part	Datasheet
APT5F100K	APT5F100K (pdf)

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APT5F100K 1000V, 5A Max, Trr 155nS N-Channel FREDFET POWER MOS is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been opti- TO-220 mized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly reduced ratio of Crss/Ciss result in excellent noise immunity and low switching loss. The intrinsic gate resistance and capacitance of the poly-silicon gate structure APT5F100K help control di/dt during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency. Single die FREDFET G • Fast switching with low EMI • ZVS phase shifted and other full bridge • Low trr for high reliability • Ultra low Crss for improved noise immunity • Low gate charge • Avalanche energy rated • RoHS compliant • Half bridge • PFC and other boost converter • Buck converter • Single and two switch forward • Flyback Absolute Maximum Ratings Symbol Parameter Continuous Drain Current TC = 25°C Continuous Drain Current TC = 100°C Pulsed Drain Current 1 VGS Gate-Source Voltage EAS Single Pulse Avalanche Energy 2 Avalanche Current, Repetitive or Non-Repetitive Thermal and Mechanical Characteristics Symbol Characteristic Total Power Dissipation TC = 25°C Junction to Case Thermal Resistance Case to Sink Thermal Resistance, Flat, Greased Surface TJ,TSTG Operating and Storage Junction Temperature Range Soldering Temperature for 10 Seconds 1.6mm from case Package Weight Torque Mounting Torque TO-247 Package , 4-40 or M3 screw Ratings Unit ±30 Min Typ Max Unit °C/W 10 in•lbf N•m Microsemi Website - Static Characteristics

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APT5F100K
1000V, 5A Max, Trr 155nS

N-Channel FREDFET

POWER MOS is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been opti-

TO-220
mized for high reliability in ZVS phase shifted bridge and other circuits through reduced
trr, soft recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a
greatly reduced ratio of Crss/Ciss result in excellent noise immunity and low switching
loss. The intrinsic gate resistance and capacitance of the poly-silicon gate structure

APT5F100K
help control di/dt during switching, resulting in low EMI and reliable paralleling, even
when switching at very high frequency.

Single die FREDFET G
• Fast switching with low EMI
• ZVS phase shifted and other full bridge
• Low trr for high reliability
• Ultra low Crss for improved noise immunity
• Low gate charge
• Avalanche energy rated
• RoHS compliant
• Half bridge
• PFC and other boost converter
• Buck converter
• Single and two switch forward
• Flyback

Absolute Maximum Ratings

Symbol Parameter

Continuous Drain Current TC = 25°C Continuous Drain Current TC = 100°C

Pulsed Drain Current 1

VGS Gate-Source Voltage

EAS Single Pulse Avalanche Energy 2

Avalanche Current, Repetitive or Non-Repetitive

Thermal and Mechanical Characteristics

Symbol Characteristic

Total Power Dissipation TC = 25°C Junction to Case Thermal Resistance

Case to Sink Thermal Resistance, Flat, Greased Surface

TJ,TSTG Operating and Storage Junction Temperature Range

Soldering Temperature for 10 Seconds 1.6mm from case

Package Weight

Torque Mounting Torque TO-247 Package , 4-40 or M3 screw

Ratings

Unit
±30

Min Typ Max Unit
°C/W
10 in•lbf

N•m

Microsemi Website -

Static Characteristics

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Datasheet ID: APT5F100K 648685