MIO1500-25E10

MIO1500-25E10 Datasheet

MIO 1500-25E10

Part	Datasheet
MIO1500-25E10	MIO1500-25E10 (pdf)

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Advanced Technical Information MIO 1500-25E10 IGBT Module Single switch Short Circuit SOA Capability Square RBSOA IC80 = 1500 A VCES = 2500 V VCE sat typ. = V IGBT Symbol VCES VGES IC80 ICM tSC VCE sat VGE th ICES tFeatures Conditions u VGE = 0 V o TC = 80°C - tp = 1 ms TC = 80°C VCC = 1700 V VCEM CHIP = < 2500 V; e VGE < 15 V TVJ < 125°C Maximum Ratings 2500 ± 20 1500 3000 a s Conditions Characteristic Values TVJ = 25°C, unless otherwise specified min. typ. max. • IGBT - Low-loss - Smooth switching waveforms for good EMC • Industry standard package - High power density - AISiC base-plate for high power cycling capacity - AIN substrate for low thermal resistance • AC power converters for - industrial drives - windmills - traction • LASER pulse generator h IC = 1500 A VGE = 15 V TVJ = 25°C TVJ = 125°C p IC = 240 mA VCE = VGE VCE = 2500 V VGE = 0 V TVJ = 125°C 100 mA IGES VCE = 0 V VGE = ± 20 V TVJ = 125°C 500 nA Inductive load TVJ = 125°C VGE = ±15 V; 1400 Eoff VCC = 1200V IC = 1500A RG = = 100nH 1450

PDF Datasheet Preview

Advanced Technical Information

MIO 1500-25E10

IGBT Module Single switch

Short Circuit SOA Capability Square RBSOA

IC80
= 1500 A

VCES
= 2500 V

VCE sat typ. = V

IGBT Symbol VCES VGES IC80 ICM tSC

VCE sat

VGE th ICES
tFeatures

Conditions
u VGE = 0 V o TC = 80°C - tp = 1 ms TC = 80°C

VCC = 1700 V VCEM CHIP = < 2500 V;
e VGE < 15 V TVJ < 125°C

Maximum Ratings
2500
± 20
1500
3000
a s Conditions

Characteristic Values TVJ = 25°C, unless otherwise specified
min. typ. max.
• IGBT - Low-loss - Smooth switching waveforms for good EMC
• Industry standard package - High power density - AISiC base-plate for high power cycling capacity - AIN substrate for low thermal resistance
• AC power converters for - industrial drives - windmills - traction
• LASER pulse generator
h IC = 1500 A VGE = 15 V TVJ = 25°C TVJ = 125°C
p IC = 240 mA VCE = VGE

VCE = 2500 V VGE = 0 V TVJ = 125°C
100 mA

IGES

VCE = 0 V VGE = ± 20 V TVJ = 125°C
500 nA

Inductive load TVJ = 125°C VGE = ±15 V;
1400

Eoff

VCC = 1200V IC = 1500A RG = = 100nH
1450

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Datasheet ID: MIO1500-25E10 644378