IRGP4062-EPBF

IRGP4062-EPBF Datasheet

IRGP4062-EPbF

Part	Datasheet
IRGP4062-EPBF	IRGP4062-EPBF (pdf)

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INSULATED GATE BIPOLAR TRANSISTOR IRGP4062-EPbF • Low VCE ON Trench IGBT Technology • Low switching losses • Maximum Junction temperature 175 °C • 5 uS short circuit SOA • Square RBSOA • 100% of the parts tested for ILM • Positive VCE ON Temperature co-efficient • Tight parameter distribution • Lead Free Package n-channel VCES = 600V IC = 24A, TC = 100°C tSC TJ max = 175°C VCE on typ. = 1.65V • High Efficiency in a wide range of applications • Suitable for a wide range of switching frequencies due to Low VCE ON and Low Switching losses • Rugged transient Performance for increased reliability • Excellent Current sharing in parallel operation • Low EMI G Gate E C G TO-247AD C Collector E Emitter Base part number IRGP4062-EPbF Package Type TO-247AD Standard Pack Form Quantity Tube Orderable part number IRGP4062-EPbF Absolute Maximum Ratings Parameter VCES IC TC = 25°C IC TC = 100°C ICM Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current, VGE = 15V c Clamped Inductive Load Current, VGE = 20V Continuous Gate-to-Emitter Voltage Transient Gate-to-Emitter Voltage PD TC = 25°C PD TC = 100°C TJ TST G Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw Thermal Resistance Parameter Thermal Resistance Junction-to-Case Thermal Resistance, Case-to-Sink flat, greased surface Thermal Resistance, Junction-to-Ambient typical socket mount Max. 600 48 24 72 96 ±20 ±30 250 125 -55 to +175 300 in. 1.6mm from case 10 lbf•in N•m Min. Typ. Max. 40 Units V Units °C/W 2012 International Rectifier

PDF Datasheet Preview

INSULATED GATE BIPOLAR TRANSISTOR

IRGP4062-EPbF
• Low VCE ON Trench IGBT Technology
• Low switching losses
• Maximum Junction temperature 175 °C
• 5 uS short circuit SOA
• Square RBSOA
• 100% of the parts tested for ILM
• Positive VCE ON Temperature co-efficient
• Tight parameter distribution
• Lead Free Package
n-channel

VCES = 600V IC = 24A, TC = 100°C tSC TJ max = 175°C VCE on typ. = 1.65V
• High Efficiency in a wide range of applications
• Suitable for a wide range of switching frequencies due to

Low VCE ON and Low Switching losses
• Rugged transient Performance for increased reliability
• Excellent Current sharing in parallel operation
• Low EMI

G Gate

E C G TO-247AD

C Collector

E Emitter

Base part number IRGP4062-EPbF

Package Type TO-247AD

Standard Pack

Form

Quantity

Tube

Orderable part number IRGP4062-EPbF

Absolute Maximum Ratings

Parameter

VCES IC TC = 25°C IC TC = 100°C ICM

Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current, VGE = 15V
c Clamped Inductive Load Current, VGE = 20V

Continuous Gate-to-Emitter Voltage

Transient Gate-to-Emitter Voltage

PD TC = 25°C PD TC = 100°C TJ TST G

Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec.

Mounting Torque, 6-32 or M3 Screw

Thermal Resistance

Parameter

Thermal Resistance Junction-to-Case

Thermal Resistance, Case-to-Sink flat, greased surface

Thermal Resistance, Junction-to-Ambient typical socket mount

Max. 600 48 24 72 96 ±20 ±30 250 125 -55 to +175
300 in. 1.6mm from case 10 lbf•in N•m

Min.

Typ.

Max. 40

Units V

Units °C/W
2012 International Rectifier

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Datasheet ID: IRGP4062-EPBF 639068