MAMG-001215-090L0L

MAMG-001215-090L0L Datasheet

MAMG-002735-085L0L GaN on SiC

Part	Datasheet
MAMG-001215-090L0L	MAMG-001215-090L0L (pdf)

Related Parts	Information
MAMG-001215-090L0M	MAMG-001215-090L0M

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RF High Power GaN Portfolio GaN on Si and GaN on SiC GaN RF Power Products Next generation high power RF semiconductor technology MACOM continues to develop industry-leading gallium nitride GaN RF power products. Our product portfolio leverages MACOM’s more than 60-year heritage of providing best-in-class standard, application specific and custom solutions for our radar, EW, ISM, and communications customers. As a member of the RF Energy Alliance, MACOM brings GaN technology into mainstream applications such as RF ignition systems, solid-state cooking, and high-lumen plasma lighting. MACOM GaN products are offered as unmatched transistors, internally matched power transistors, and fully matched power pallets and modules. Using high performance GaN HEMT processes and leveraging our proprietary die layout and assembly techniques, these products exhibit robust thermal properties and excellent RF performance with respect to power, gain, gain-flatness, efficiency, and ruggedness for applications up to 6 GHz. MACOM’s industry-leading portfolio of cost-effective RF power products uses our unique GaN on Silicon and GaN on Silicon Carbide technology to deliver the cost, bandwidth, power density, and efficiency advantages of GaN in a variety of form factors including 5 W to 90 W peak power transistors in DFN and SOT89 plastic packages, as well as HF through S-band modules and 50 Ω matched pallets. Our GaN on Silicon transistors and amplifiers improve upon the high power and efficiency performance of LDMOS with the high frequency performance of GaAs, and include ceramic transistors up to 200 W, DFN packaged broadband transistors from 5 W to 25 W, and TO272 packaged transistors from 50 W to 200 W. Only MACOM delivers GaN performance at silicon cost structures to drive adoption. Why choose GaN? GaN advantages include: > High breakdown voltage > Multi-octave bandwidth > Superior power density > High frequency operation > High RF gain and efficiency > Excellent thermal conductivity > GaN performance at silicon cost structures For over 45 years, MACOM engineers have been redefining RF power and are now applying their GaN expertise to an array of commercial, industrial, scientific, medical and wireless applications. Turn to MACOM for superior performance, high power GaN solutions. Part # / Frequency Power MAPG-002729-350L00, GaN on SiC High Power Dual Transistors Pallet 350W MAGX-001090-700L0x GHz GaN on SiC HEMT Pulsed Power Transistor 700W MAMG-002735-085L0L GaN on SiC 2-4 GHz Fully Matched Hybrid NPA1008 GHz GaN on Si Wideband Power NPT2022 1 MHz-3 GHz GaN on Si Wideband Transistor 100W MAGX-011086 1 MHz-6 GHz GaN on Si Wideband Transistor NPT2020 1 MHz-3.5 GHz GaN on Si HEMT D-Mode Transistor Freq MHz-GHz 1 MHz 1 GHz 2

PDF Datasheet Preview

RF High Power GaN Portfolio

GaN on Si and GaN on SiC

GaN RF Power Products

Next generation high power RF semiconductor technology

MACOM continues to develop industry-leading gallium nitride GaN RF power products. Our product portfolio leverages MACOM’s more than 60-year heritage of providing best-in-class standard, application specific and custom solutions for our radar, EW, ISM, and communications customers.

As a member of the RF Energy Alliance, MACOM brings GaN technology into mainstream applications such as RF ignition systems, solid-state cooking, and high-lumen plasma lighting.

MACOM GaN products are offered as unmatched transistors, internally matched power transistors, and fully matched power pallets and modules. Using high performance GaN HEMT processes and leveraging our proprietary die layout and assembly techniques, these products exhibit robust thermal properties and excellent RF performance with respect to power, gain, gain-flatness, efficiency, and ruggedness for applications up to 6 GHz.

MACOM’s industry-leading portfolio of cost-effective RF power products uses our unique GaN on Silicon and GaN on Silicon Carbide technology to deliver the cost, bandwidth, power density, and efficiency advantages of GaN in a variety of form factors including 5 W to 90 W peak power transistors in DFN and SOT89 plastic packages, as well as HF through S-band modules and 50 Ω matched pallets. Our GaN on Silicon transistors and amplifiers improve upon the high power and efficiency performance of LDMOS with the high frequency performance of GaAs, and include ceramic transistors up to 200 W, DFN packaged broadband transistors from 5 W to 25 W, and TO272 packaged transistors from 50 W to 200 W. Only MACOM delivers GaN performance at silicon cost structures to drive adoption.

Why choose GaN?

GaN advantages include:
> High breakdown voltage
> Multi-octave bandwidth
> Superior power density
> High frequency operation
> High RF gain and efficiency
> Excellent thermal conductivity
> GaN performance at silicon cost structures

For over 45 years, MACOM engineers have been redefining RF power and are now applying their GaN expertise to an array of commercial, industrial, scientific, medical and wireless applications.

Turn to MACOM for superior performance, high power GaN solutions.

Part # / Frequency

Power

MAPG-002729-350L00, GaN on SiC High Power

Dual Transistors Pallet
350W

MAGX-001090-700L0x GHz

GaN on SiC HEMT Pulsed Power Transistor
700W

MAMG-002735-085L0L GaN on SiC
2-4 GHz

Fully Matched Hybrid

NPA1008 GHz

GaN on Si Wideband Power

NPT2022 1 MHz-3 GHz

GaN on Si Wideband Transistor
100W

MAGX-011086 1 MHz-6 GHz

GaN on Si Wideband Transistor

NPT2020
1 MHz-3.5 GHz

GaN on Si HEMT D-Mode Transistor

Freq MHz-GHz 1 MHz 1 GHz 2

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived MAMG-001215-090L0L Datasheet file may be downloaded here without warranties.

Datasheet ID: MAMG-001215-090L0L 646837