RMPA2458

RMPA2458 Datasheet

RMPA2458 GHz InGaP HBT Low Current Linear Power

Part	Datasheet
RMPA2458	RMPA2458 (pdf)

PDF Datasheet Preview
RMPA2458 GHz InGaP HBT Low Current Linear Power September 2005 RMPA2458 GHz InGaP HBT Low Current Linear Power • 31.5dB small signal gain • 27dBm output power 1dB compression • 103mA total current at 19dBm modulated power out • EVM at 19 dBm modulated power out • 3.3V collector supply operation • 2.9V mirror supply operation • Power saving shutdown options bias control • Integrated power detector with 20dB dynamic range • Lead-free RoHS compliant 3 x 3 x 0.9mm leadless package • Internally matched to 50 Ohms and DC blocked RF input/ output • Optimized for use in 802.11b/g applications The RMPA2458 power amplifier is designed for high performance WLAN applications in the GHz frequency band. The low profile 16 pin 3 x 3 x mm package with internal matching on both input and output to 50 Ohms minimizes next level PCB space and allows for simplified integration. The onchip detector provides power sensing capability while the bias control provides power saving shutdown capability. The PA’s industry leading low power consumption and excellent linearity are achieved using our InGaP Heterojunction Bipolar Transistor HBT technology. Device Electrical Characteristics1 802.11g OFDM Modulation 176 µs burst time, 100 µs idle time 54 Mbps Data Rate, MHz Bandwidth Parameter Frequency Collector Supply Voltage Mirror Supply Voltage Mirror Supply Current Gain Total Current 19dBm POUT EVM 19dBm POUT2 Detector Output 19dBm POUT Detector Threshold3 103 340 5 Notes VC1, VC2, VC3 = 3.3V, VM123 = 2.9V, TA = 25°C, PA is constantly biased, system. Percentage includes system noise of EVM = POUT measured at PIN corresponding to power detection threshold. Units GHz V mA dB mA % mV 2005 Fairchild Semiconductor Corporation RMPA2458 GHz InGaP HBT Low Current Linear Power Electrical Characteristics1 802.11b CCK Modulation RF not framed 11 Mbps Data Rate MHz Bandwidth Parameter Frequency Collector Supply Voltage Mirror Supply Voltage Mirror Supply Current Gain Total Current 19dBm Pout First Side Lobe Power 19dBm Pout Second Side Lobe Power 19dBm Pout Max Pout Spectral Mask Compliance2 Detector Output 19dBm Pout Detector Pout Threshold3 Electrical Characteristics1 Single Tone Parameter Frequency Collector Supply Voltage Mirror Supply Voltage VM123 Gain Total Quiescent Current Bias Current at pin VM1234 P1dB Compression Current P1dB Compression Shutdown Current VM123 = 0V Input Return Loss Output Return Loss Detector Output at P1dB Compression Detector Pout Threshold3 Turn-on Time5 Spurious Stability 6 Notes VC1, VC2, VC3 = 3.3V, VM123 = Volts, Ta = 25°C, PA is constantly biased, system. PIN is adjusted to point where performance approaches spectral mask requirements. POUT measured at PIN corresponding to power detection threshold. Mirror bias current is included in the total quiescent current. Measured from Device On signal turn on to the point where RF POUT stabilizes to 0.5dB. Load VSWR is set to 8:1 and the angle is varied 360 degrees. POUT = -30dBm to P1dB. 32 130 -36 -60 24 5 49 27 600 12 9 5 -65 Units GHz V mA dB mA V dBm Units GHz V dB mA dBm mA µA dB V µS dBc RMPA2458 GHz InGaP HBT Low Current Linear Power Absolute Ratings1 VC1, VC2, VC3 IC1, IC2, IC3 VM123 PIN TCASE TSTG Parameter Positive Supply Voltage Supply Current IC1 IC2 IC3 Positive Bias Voltage RF Input Power Case Operating Temperature Storage Temperature Note No permanent damage with one parameter set at extreme limit. Other parameters set to typical values.

PDF Datasheet Preview

RMPA2458 GHz InGaP HBT Low Current Linear Power

September 2005

RMPA2458 GHz InGaP HBT Low Current Linear Power
• 31.5dB small signal gain
• 27dBm output power 1dB compression
• 103mA total current at 19dBm modulated power out
• EVM at 19 dBm modulated power out
• 3.3V collector supply operation
• 2.9V mirror supply operation
• Power saving shutdown options bias control
• Integrated power detector with 20dB dynamic range
• Lead-free RoHS compliant 3 x 3 x 0.9mm leadless package
• Internally matched to 50 Ohms and DC blocked RF input/
output
• Optimized for use in 802.11b/g applications

The RMPA2458 power amplifier is designed for high performance WLAN applications in the GHz frequency band. The low profile 16 pin 3 x 3 x mm package with internal matching on both input and output to 50 Ohms minimizes next level PCB space and allows for simplified integration. The onchip detector provides power sensing capability while the bias control provides power saving shutdown capability. The PA’s industry leading low power consumption and excellent linearity are achieved using our InGaP Heterojunction Bipolar Transistor HBT technology.

Device

Electrical Characteristics1 802.11g OFDM Modulation
176 µs burst time, 100 µs idle time 54 Mbps Data Rate, MHz Bandwidth

Parameter

Frequency Collector Supply Voltage Mirror Supply Voltage Mirror Supply Current Gain Total Current 19dBm POUT EVM 19dBm POUT2 Detector Output 19dBm POUT Detector Threshold3
103 340 5

Notes VC1, VC2, VC3 = 3.3V, VM123 = 2.9V, TA = 25°C, PA is constantly biased, system. Percentage includes system noise of EVM = POUT measured at PIN corresponding to power detection threshold.

Units

GHz V mA dB mA % mV
2005 Fairchild Semiconductor Corporation

RMPA2458 GHz InGaP HBT Low Current Linear Power

Electrical Characteristics1 802.11b CCK Modulation

RF not framed 11 Mbps Data Rate MHz Bandwidth

Parameter

Frequency Collector Supply Voltage Mirror Supply Voltage Mirror Supply Current Gain Total Current 19dBm Pout First Side Lobe Power 19dBm Pout Second Side Lobe Power 19dBm Pout Max Pout Spectral Mask Compliance2 Detector Output 19dBm Pout Detector Pout Threshold3

Electrical Characteristics1 Single Tone

Parameter

Frequency Collector Supply Voltage Mirror Supply Voltage VM123 Gain Total Quiescent Current Bias Current at pin VM1234 P1dB Compression Current P1dB Compression Shutdown Current VM123 = 0V Input Return Loss Output Return Loss Detector Output at P1dB Compression Detector Pout Threshold3 Turn-on Time5 Spurious Stability 6

Notes VC1, VC2, VC3 = 3.3V, VM123 = Volts, Ta = 25°C, PA is constantly biased, system. PIN is adjusted to point where performance approaches spectral mask requirements. POUT measured at PIN corresponding to power detection threshold. Mirror bias current is included in the total quiescent current. Measured from Device On signal turn on to the point where RF POUT stabilizes to 0.5dB. Load VSWR is set to 8:1 and the angle is varied 360 degrees. POUT = -30dBm to P1dB.
32 130 -36 -60 24 5
49 27 600 12 9 5 -65

Units

GHz V mA dB mA

V dBm

Units

GHz V dB mA
dBm mA µA dB V µS dBc

RMPA2458 GHz InGaP HBT Low Current Linear Power

Absolute Ratings1

VC1, VC2, VC3 IC1, IC2, IC3

VM123 PIN TCASE TSTG

Parameter

Positive Supply Voltage Supply Current

IC1 IC2 IC3 Positive Bias Voltage RF Input Power Case Operating Temperature Storage Temperature

Note No permanent damage with one parameter set at extreme limit. Other parameters set to typical values.

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived RMPA2458 Datasheet file may be downloaded here without warranties.

Datasheet ID: RMPA2458 634689