IRGP4790-EPBF

IRGP4790-EPBF Datasheet

IRGP4790PbF IRGP4790-EPbF

Part	Datasheet
IRGP4790-EPBF	IRGP4790-EPBF (pdf)

Related Parts	Information
IRGP4790PBF	IRGP4790PBF

PDF Datasheet Preview
VCES = 650V IC = 90A, TC =100°C tSC TJ max = 175°C VCE ON typ. = 1.7V IC = 75A Applications • Industrial Motor Drive • UPS • Solar Inverters • Welding Features Low VCE ON and Switching Losses 5.5µs Short Circuit SOA Square RBSOA Maximum Junction Temperature 175°C Positive VCE ON Temperature Coefficient Lead-Free, RoHs compliant IRGP4790PbF IRGP4790-EPbF Insulated Gate Bipolar Transistor n-channel G Gate IRGP4790PbF C Collector E Emitter Benefits High Efficiency in a Wide Range of Applications Rugged Transient Performance Increased Reliability Excellent Current Sharing in Parallel Operation Environmentally friendly Base part number IRGP4790PbF IRGP4790-EPbF Package Type TO-247AC TO-247AD Standard Pack Form Quantity Tube Tube Orderable Part Number IRGP4790PbF IRGP4790-EPbF Absolute Maximum Ratings Parameter VCES IC TC = 25°C IC TC = 100°C ICM ILM VGE PD TC = 25°C PD TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current, VGE=15V Clamped Inductive Load Current, VGE=20V Continuous Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw Max. 650 140 90 225 300 ±20 455 230 -40 to +175 300 in. 1.6mm from case 10 lbf•in N•m Units V Thermal Resistance Parameter Thermal Resistance Junction-to-Case  Thermal Resistance, Case-to-Sink flat, greased surface Thermal Resistance, Junction-to-Ambient typical socket mount Min. Typ. 40 Max.

PDF Datasheet Preview

VCES = 650V

IC = 90A, TC =100°C
tSC TJ max = 175°C

VCE ON typ. = 1.7V IC = 75A

Applications
• Industrial Motor Drive
• UPS
• Solar Inverters
• Welding

Features Low VCE ON and Switching Losses 5.5µs Short Circuit SOA Square RBSOA Maximum Junction Temperature 175°C Positive VCE ON Temperature Coefficient Lead-Free, RoHs compliant

IRGP4790PbF IRGP4790-EPbF

Insulated Gate Bipolar Transistor
n-channel

G Gate

IRGP4790PbF

C Collector

E Emitter

Benefits High Efficiency in a Wide Range of Applications

Rugged Transient Performance

Increased Reliability Excellent Current Sharing in Parallel Operation Environmentally friendly

Base part number

IRGP4790PbF IRGP4790-EPbF

Package Type

TO-247AC TO-247AD

Standard Pack

Form

Quantity

Tube

Tube

Orderable Part Number

IRGP4790PbF IRGP4790-EPbF

Absolute Maximum Ratings

Parameter

VCES IC TC = 25°C IC TC = 100°C ICM ILM VGE PD TC = 25°C PD TC = 100°C TJ TSTG

Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current, VGE=15V Clamped Inductive Load Current, VGE=20V Continuous Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw

Max.
650 140 90 225 300 ±20 455 230 -40 to +175
300 in. 1.6mm from case 10 lbf•in N•m

Units V

Thermal Resistance

Parameter

Thermal Resistance Junction-to-Case  Thermal Resistance, Case-to-Sink flat, greased surface Thermal Resistance, Junction-to-Ambient typical socket mount

Min.

Typ. 40

Max.

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Datasheet ID: IRGP4790-EPBF 638357