APTGF15H120T3G
APTGF15H120T3G Datasheet
APTGF15H120T3G
| Part | Datasheet |
|---|---|
APTGF15H120T3G |
APTGF15H120T3G (pdf) |
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| APTGF15H120T3G Full - Bridge NPT IGBT Power Module 13 14 CR1 CR3 CR2 CR4 16 R1 28 27 26 25 29 30 23 22 20 19 18 16 15 31 32 14 13 10 11 12 All multiple inputs and outputs must be shorted together Example 13/14 29/30 22/23 VCES = 1200V IC = 15A Tc = 80°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • Non Punch Through NPT Fast - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated - Symmetrical design • Kelvin emitter for easy drive • Very low stray inductance • High level of integration • Internal thermistor for temperature monitoring Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink isolated package • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • Easy paralleling due to positive TC of VCEsat • Each leg can be easily paralleled to achieve a phase leg of twice the current capability • RoHS compliant Absolute maximum ratings Parameter Max ratings Unit VCES Collector - Emitter Breakdown Voltage 1200 IC Continuous Collector Current TC = 25°C TC = 80°C ICM Pulsed Collector Current TC = 25°C VGE Gate Emitter Voltage ±20 PD Maximum Power Dissipation TC = 25°C Tj = 125°C These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on APTGF15H120T3G All ratings Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit ICES Zero Gate Voltage Collector Current VCE sat Collector Emitter Saturation Voltage VGE th Gate Threshold Voltage IGES Gate Emitter Leakage Current VGE = 0V VCE = 1200V |
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