TN6727A
TN6727A Datasheet
TN6727A
| Part | Datasheet |
|---|---|
TN6727A |
TN6727A (pdf) |
| Related Parts | Information |
|---|---|
TN6727A_D74Z |
TN6727A_D74Z |
| PDF Datasheet Preview |
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| TN6727A TN6727A TO-226 PNP General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1A. Sourced from Process See TN6726A for characteristics. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Parameter Value VCES Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage Collector Current - Continuous TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Units V A °C NOTES 1 These ratings are based on a maximum junction temperature of 150°C. 2 These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Characteristic TN6727A Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Units W mW/°C °C/W °C/W 1997 Fairchild Semiconductor Corporation TN6727A PNP General Purpose Amplifier continued Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Min Max Units |
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