TN6705A
TN6705A Datasheet
TN6705A
| Part | Datasheet |
|---|---|
TN6705A |
TN6705A (pdf) |
| Related Parts | Information |
|---|---|
TN6705A_D26Z |
TN6705A_D26Z |
| PDF Datasheet Preview |
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| TN6705A TN6705A Discrete POWER & Signal Technologies TO-226 NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to A. Sourced from Process See TN6715A for characteristics. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Parameter Value VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage IC TJ, Tstg Collector Current - Continuous Operating and Storage Junction Temperature Range -55 to +150 *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES 1 These ratings are based on a maximum junction temperature of 150 degrees C. 2 These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient TN6705a 125 50 Units V A °C Units W mW/°C °C/W °C/W 1997 Fairchild Semiconductor Corporation TN6705A NPN General Purpose Amplifier continued Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS |
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