IRGBC30UD2

IRGBC30UD2 Datasheet

IRGBC30UD2

Part	Datasheet
IRGBC30UD2	IRGBC30UD2 (pdf)

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INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE PD - 9.796A IRGBC30UD2 UltraFast CoPack IGBT • Switching-loss rating includes all "tail" losses • HEXFREDTM soft ultrafast diodes • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve n-channel VCES = 600V VCE sat 3.0V = 15V, IC = 12A Co-packaged IGBTs are a natural extension of International Rectifier's well known IGBT line. They provide the convenience of an IGBT and an ultrafast recovery diode in one package, resulting in substantial benefits to a host of high-voltage, high-current, motor control, UPS and power supply applications. Absolute Maximum Ratings VCES IC TC = 25°C IC TC = 100°C ICM ILM IF TC = 100°C IFM VGE PD TC = 25°C PD TC = 100°C TJ TSTG Parameter Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw. Thermal Resistance Parameter Junction-to-Case - IGBT Junction-to-Case - Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight C-701 TO-220AB Max. 600 23 12 92 12 92 ± 20 100 42 -55 to +150 300 in. 1.6mm from case 10 lbf•in N•m Units V Min. Typ. Max. 80 Units °C/W IRGBC30UD2 Electrical Characteristics TJ = 25°C unless otherwise specified Parameter Min. Typ. Max. Units Conditions V BR CES VCE on Collector-to-Emitter Breakdown Voltage Temperature Coeff. of Breakdown Voltage Collector-to-Emitter Saturation Voltage VGE th gfe ICES Gate Threshold Voltage Temperature Coeff. of Threshold Voltage Forward Transconductance Zero Gate Voltage Collector Current Diode Forward Voltage Drop IGES Gate-to-Emitter Leakage Current 600 V VGE = 0V, IC = 250µA V/°C VGE = 0V, IC = 1.0mA IC = 12A VGE = 15V V IC = 23A See Fig. 2, 5

PDF Datasheet Preview

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

PD - 9.796A

IRGBC30UD2

UltraFast CoPack IGBT
• Switching-loss rating includes all "tail" losses
• HEXFREDTM soft ultrafast diodes
• Optimized for high operating frequency over 5kHz

See Fig. 1 for Current vs. Frequency curve
n-channel

VCES = 600V VCE sat 3.0V = 15V, IC = 12A

Co-packaged IGBTs are a natural extension of International Rectifier's well known IGBT line. They provide the convenience of an IGBT and an ultrafast recovery diode in one package, resulting in substantial benefits to a host of high-voltage, high-current, motor control, UPS and power supply applications.

Absolute Maximum Ratings

VCES IC TC = 25°C IC TC = 100°C ICM ILM IF TC = 100°C IFM VGE PD TC = 25°C PD TC = 100°C TJ TSTG

Parameter Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw.

Thermal Resistance

Parameter Junction-to-Case - IGBT Junction-to-Case - Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight

C-701

TO-220AB

Max. 600 23 12 92 12 92 ± 20 100 42 -55 to +150
300 in. 1.6mm from case 10 lbf•in N•m

Units V

Min.

Typ.

Max. 80

Units °C/W

IRGBC30UD2

Electrical Characteristics TJ = 25°C unless otherwise specified

Parameter

Min. Typ. Max. Units

Conditions

V BR CES VCE on

Collector-to-Emitter Breakdown Voltage Temperature Coeff. of Breakdown Voltage Collector-to-Emitter Saturation Voltage

VGE th gfe ICES

Gate Threshold Voltage Temperature Coeff. of Threshold Voltage Forward Transconductance Zero Gate Voltage Collector Current

Diode Forward Voltage Drop

IGES

Gate-to-Emitter Leakage Current
600 V VGE = 0V, IC = 250µA

V/°C VGE = 0V, IC = 1.0mA

IC = 12A

VGE = 15V

V IC = 23A

See Fig. 2, 5

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Datasheet ID: IRGBC30UD2 639064