SPI12N50C3HKSA1

SPI12N50C3HKSA1 Datasheet

SPP12N50C3 SPI12N50C3, SPA12N50C3

Part	Datasheet
SPI12N50C3HKSA1	SPI12N50C3HKSA1 (pdf)

Related Parts	Information
SPP12N50C3HKSA1	SPP12N50C3HKSA1
SPA12N50C3XKSA1	SPA12N50C3XKSA1
SPP12N50C3XKSA1	SPP12N50C3XKSA1
SPI12N50C3XKSA1	SPI12N50C3XKSA1

PDF Datasheet Preview
SPP12N50C3 SPI12N50C3, SPA12N50C3 Cool MOS Power Transistor VDS Tjmax 560 V RDS on • Periodic avalanche rated PG-TO220-F3P-31 PG-TO262- PG-TO220 • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance 1 23 P-TO220-3-31 P-TO220-3-1 • PG-TO-220-3-31;-3-111 Fully isolated package 2500 VAC 1 minute Type SPP12N50C3 Package PG-TO220 Ordering Code Q67040-S4579 Marking 12N50C3 SPI12N50C3 SPA12N50C3 PG-TO262 Q67040-S4578 PG-TO220FP SP000216322 12N50C3 Maximum Ratings Parameter Continuous drain current TC = 25 °C TC = 100 °C Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse ID=5.5A, VDD=50V Avalanche energy, repetitive tAR limited by Tjmax2 ID=11.6A, VDD=50V ID puls EAS IAR VGS Ptot Tj , Tstg dv/dt Value SPP_I 71 340 ±20 ±20 ±30 ±30 Unit A A V W °C V/ns 2009-11-30 SPP12N50C3 SPI12N50C3, SPA12N50C3 Maximum Ratings Parameter Drain Source voltage slope VDS = 400 V, ID = A, Tj = 125 °C Symbol dv/dt Value 50 Unit V/ns Thermal Characteristics Parameter Thermal resistance, junction - case Thermal resistance, junction - case, FullPAK Thermal resistance, junction - ambient, leaded Thermal resistance, junction - ambient, FullPAK SMD version, device on PCB min. footprint 6 cm2 cooling area 3 Soldering temperature, wavesoldering mm in. from case for 10s 4 RthJC RthJC_FP RthJA RthJA_FP RthJA Tsold Values Unit min. typ. max. 1 K/W - 260 °C Electrical Characteristics, at Tj=25°C unless otherwise specified Parameter

PDF Datasheet Preview

SPP12N50C3 SPI12N50C3, SPA12N50C3

Cool MOS Power Transistor

VDS Tjmax 560 V

RDS on
• Periodic avalanche rated

PG-TO220-F3P-31 PG-TO262- PG-TO220
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance
1 23 P-TO220-3-31

P-TO220-3-1
• PG-TO-220-3-31;-3-111 Fully isolated package 2500 VAC 1 minute

Type SPP12N50C3

Package PG-TO220
Ordering Code Q67040-S4579

Marking 12N50C3

SPI12N50C3 SPA12N50C3

PG-TO262 Q67040-S4578 PG-TO220FP SP000216322
12N50C3

Maximum Ratings Parameter

Continuous drain current

TC = 25 °C TC = 100 °C

Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse

ID=5.5A, VDD=50V

Avalanche energy, repetitive tAR limited by Tjmax2

ID=11.6A, VDD=50V

ID puls EAS

IAR VGS Ptot Tj , Tstg dv/dt

Value

SPP_I
71 340
±20
±20
±30
±30

Unit A

A V W °C V/ns
2009-11-30

SPP12N50C3 SPI12N50C3, SPA12N50C3

Maximum Ratings Parameter Drain Source voltage slope

VDS = 400 V, ID = A, Tj = 125 °C

Symbol dv/dt

Value 50

Unit V/ns

Thermal Characteristics Parameter

Thermal resistance, junction - case Thermal resistance, junction - case, FullPAK Thermal resistance, junction - ambient, leaded Thermal resistance, junction - ambient, FullPAK SMD version, device on PCB min. footprint 6 cm2 cooling area 3 Soldering temperature, wavesoldering mm in. from case for 10s 4

RthJC RthJC_FP RthJA RthJA_FP RthJA

Tsold

Values

Unit
min. typ. max.
1 K/W
- 260 °C

Electrical Characteristics, at Tj=25°C unless otherwise specified

Parameter

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Datasheet ID: SPI12N50C3HKSA1 638664